56-590-65-3B FERRITE BEADS Search Results

TB172

Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Contextual Info: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322

mrf455

Abstract: Motorola transistors MRF455 TRANSISTOR mrf455 MRF455 APPLICATION NOTES equivalent transistor rf "30 mhz" beads ferroxcube ferroxcube ferrite beads MRF455 motorola vk200 VK200 FERRITE
Contextual Info: MOTOROLA Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

RE60G1R00

Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

C10 PH

Abstract: 56-590-65-3B 369A-10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

johanson

Contextual Info: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ferroxcube 56-590-65

Abstract: ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF
Contextual Info: Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

MHW591

Abstract: MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
Contextual Info: Order this document by AN779/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN779 LOW-DISTORTION 1.6 TO 30 MHz SSB DRIVER DESIGNS Prepared by: Helge O. Granberg RF Circuits Engineering GENERAL CONSIDERATION Two of the most important factors to be considered in

56-590-65-3B Ferrite Beads

Abstract: T491X226K035AS4394 T495X106K035AS4394 MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and

56-590-65-3B Ferrite Beads

Abstract: NI-880 MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and

ic marking ACOM

Abstract: vk200 MRF455 beads ferroxcube FERROXCUBE VK200 marking code macom VK200 FERRITE pin configuration npn transistor 547 MRF-455
Contextual Info: Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

ferroxcube ferrite beads

Abstract: ferroxcube for ferrite beads MRF19090
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and

500 watts amplifier schematic diagram pcb layout

Abstract: MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier

mex gpf

Abstract: MRF5177 gpf k x2 gpf k x2 mex gpf PORCELAIN
Contextual Info: MRF5177 SILICON The RF Line 30 W, 400 MHz RF POWER T RA N SISTO R NPN SILIC O N NPN SIL IC O N RF POWER T R A N SIST O R . .designed fo r V H F / U H F p o w e r a m plifie r applications. T h is device iso p tim ize d fo r rugged p e rform ance in 2 2 5 -4 0 0 M H i c o m m u n ic a tio n s

CASE-211-11 MRF421

Abstract: adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421
Contextual Info: Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

adc 809

Abstract: ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422
Contextual Info: Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP

MRF454

Abstract: MRF454 motorola transistors MRF454 Motorola transistors MRF454 Motorola 1517 MRF454 APPLICATION NOTES motorola rf power motorola rf Power Transistor ferroxcube ferrite beads nippon ferrite
Contextual Info: MOTOROLA Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

K 3569 7.G equivalent

Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

mrf284

Abstract: C10 PH
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ATC 100C

Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

ferroxcube for ferrite beads

Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

marking amplifier j02

Abstract: CDR33BX104AKWS MRF284 MRF284LR1 MRF284LSR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier