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Contextual Info: WA MINIATURE ALUMINUM ELECTRC'LVTIC CAPACI TONS SERIES 85°c 85°C Miniaturized low profile. ♦# fi: FEATURES • a ¿16~25mmnq 16~25mm height. 1 0 5 ° C 4 t¡W ffItt WA W XA 105°C Version 54page SPECIFICATIO N S M il Items —40~+85°C —25~+85°C 6.3~250V.DC

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

MSM 7227

Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
Contextual Info: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

BA254

Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
Contextual Info: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

TCA 785 application note

Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx

8044H

Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. VCC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial

samsung toggle mode NAND

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY

samsung toggle mode NAND

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY

RCD 1230 SAMSUNG

Abstract: ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37
Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~ 2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial

samsung toggle mode NAND

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY

Toggle DDR NAND flash Samsung

Abstract: 0000h 63FBGA KFM1216Q2A-DEB5
Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY

512MB NOR FLASH

Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial

OneNAND

Abstract: KFH2G16Q2M-DEB5 63FBGA KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5
Contextual Info: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)

4GB MLC NAND

Abstract: samsung 2GB Nand flash samsung 1Gb nand flash Samsung Electronics. NAND flash memory Samsung MLC 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 0235H
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

samsung 2GB Nand flash 121 pins

Abstract: SLC NAND endurance 100k
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

8015

Contextual Info: OneNAND4G KFW4G16Q2M-DxB6 OneNAND2G(KFH2G16Q2M-DxB6) OneNAND1G(KFG1G16x2M-DxB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1G16D2M-DEB6 2.65V(2.4V~2.9V)

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended

8044H

Abstract: SAMSUNG 256Mb NAND Flash Qualification Report
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB5 2.65V(2.4V~2.9V) Extended

Contextual Info: TC58FVM7 T/B 2AFT (65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for

SAMSUNG 256Mb NAND Flash Qualification Report

Abstract: Samsung nand flash 2GB MLC 0301H 803A samsung 1Gb nand flash Samsung 2Gb MLC Nand flash samsung 2GB Nand flash samsung 2GB X16 Nand flash samsung dual lcd samsung MLC nand flashes
Contextual Info: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY OneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF)