53800 Search Results

ASTM B16 H02

Abstract: astm b103 ASTM B194 7905 ct ASTM b16 ASTM B488 94008 237002 ASTM b196 sd22
Contextual Info: 3.0 MECHANICAL: 3.1 MATERIALS: BODIES, PLUGS: BRASS PER ASTM B16, H02 BODIES, RECEPTACLES: COPPER BERRYLIUM PER ASTM B196 OR B05 PER UNS 53800 SPRING WASHERS: PHOPHOR BRONZE PER ASTM B103 CLIP RING: COPPER BERRYLIUM PER ASTM B194 3.2 FINISH: BODIES: GOLD PLATED PER ASTM B488

Contextual Info: DESCRIPTION E REVISED PER ER17032 2. MATERIAL SPECIFICATIONS: BERYLLIUM COPPER PER ASTM B196 OR B05 PER UNS 53800. BY APPD DATE CTC REV KEV 07/30/09 NOTES: UNLESS OTHERWISE SPECIFIED 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SD74-0000. 3. FINISH SPECIFICATIONS:

Contextual Info: DESCRIPTION B REVISED PER ER7306 2. MATERIAL SPECIFICATIONS: B05 PER UNS 53800 BY APPD DATE CWB REV CWB 04/14/08 NOTES: UNLESS OTHERWISE SPECIFIED 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SD74-0000. 3. FINISH SPECIFICATIONS: .000030 MIN. GOLD OER ASTM B488 OVER .000050 MIN. NICKEL PER AMS QQ-N-290.

Contextual Info: O K I Semiconductor 538001C 1,048,576-Word x 8-Bit Mask ROM DESCRIPTIOK The OKI M SM 538001C is a high-speed silicon gate CM OS M ask ROM with 1,048,576-word x 8-bit capac­ ity. The M SM 538001C operates on a single 5.0 V power supply and is TTL compatible. The chip's asyn­

Contextual Info: DESCRIPTION A RELEASED ECR8794 BY APPD DATE LMD REV CWB 01/16/06 NOTES: UNLESS OTHERWISE SPECIFIED 1. MATERIAL SPECIFICATIONS: BODY: B05 PER UNS 53800 2. FINISH SPECIFICATIONS: BODY: .000030 MIN. GOLD PER MIL-G-45204 OVER .000050 MIN. NICKEL PER QQ-N-290.

Contextual Info: O K I Semiconductor 538002C 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM DESCRIPTION The OKI M SM 538002C is a high-speed CM OS M ask ROM that can electrically switch betw een 524,288word x 16-bit and 1,048,576-w ord x 8-bit configurations. The M SM 538002C operates on a single 5.0 V

TC538000A

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT 538000AP/AF 8M BIT 1M W O R D x 8 B IT CM O S M A S K ROM D ESCR IPTIO N The 538000A P / A F is a 8,388,608 b its read only memory organized a s 1,048,576 words by Sbits. The TC 538000A P / A F is fabricated u sin g T oshiba’s advanced CMOS technology which provides the

53800

Contextual Info: REV REVISED PER ER11418 2. MATERIAL SPECIFICATIONS: B05 PER UNS 53800. BY APPD DATE DAO E DESCRIPTION DAO 01/05/08 NOTES: UNLESS OTHERWISE SPECIFIED 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SD74-0000. 3. FINISH SPECIFICATIONS: .000030 MIN. GOLD PER ASTM B488 OVER .000050 MIN. NICKEL PER AMS QQ-N-290.

085SQ

Abstract: M34S75C4F1
Contextual Info: B DATE JR f t REV. 538001PS ‘ON 0NIMVÜQ # #M^ A DCN NO. 2 B0.Sep.2008 0664 11 3 14.Nov.2008 066892 K W F3 ^ DESCRIPTION CHANGE OF T E R M I N A L MATERIALS PLATING LIST CHANGE OF T E R M I N A L MATERIALS PLATING LIST m h DR. * £ ÜÉ CHK. # 3 m APPD.

Contextual Info: O K I semiconductor 538002B/C_ 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM GENERAL DESCRIPTION The M S M 538002B /C is high-speed CM O S ROM. Its configuration can be electrically sw itched betw een 524,288-w ord x 16-bit and 1,048,576-w ord x 8-bit.

Vishay S.A. TR021

Abstract: MARKING 7105 NFC ferrite sheet
Contextual Info: Data sheet E 1/7.105 - 10497 molded inductors TR021 NF C 93-331 LNZ GAM-T-1 lists – axial leads – high frequency and noise suppressions applications Series : 53800 to 53899 The inductors conform to NFC 93-331 regulation. They have copper winding on magnetic core structure with tinned copper lead terminals.

CM-105

Abstract: UL1571 AWG28 AWG30 B177 B178
Contextual Info: The product information in this catalog is for reference only. Please request the Engineering Drawing for the most current and accurate design information. All non-RoHS products have been discontinued, or will be discontinued soon. Please check the products status on the Hirose website RoHS search at www.hirose-connectors.com, or contact your Hirose sales representative.

Contextual Info: The product information in this catalog is for reference only. Please request the Engineering Drawing for the most current and accurate design information. All non-RoHS products have been discontinued, or will be discontinued soon. Please check the products status on the Hirose website RoHS search at www.hirose-connectors.com, or contact your Hirose sales representative.

Contextual Info: T O S H I B A ^ E L E C T R 0N K D 2 — t~,;P^i*T>r"'~~':*-'-^ . »E § .„„„««m ^ 7E47 D01fi7ÌS ^ I T ' - n ~ z \ ~'^iV~iffiiliTfli~rTrfiiiiï ‘t OUTPUT AMP. FOR CD PLAYER Unit in mm TA7415P is an audio output de-emphasis amp. in zaOMAX CD players of portable type or low-end model.

LHF12F16

Abstract: wp 146 LH28F128BFHT-PTTL75A
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

FB75

Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition March 16, 2000 6251-459-3PD MAS 3507D MPEG 1/2 Layer 2/3 Audio Decoder MAS 3507D PRELIMINARY DATA SHEET Contents Page Section Title 5 5 6 6 6 1. 1.1. 1.2. 1.2.1. 1.2.2. Introduction Features Application Overview Multimedia Mode

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read