537 FET Search Results

80C517A

Abstract: 80C537 C500 EK51 PLCC-84 SAB80C517A 80517 OH51 KeilPK51 MM537
Contextual Info: miniMODUL-537 QuickStart Instructions Using PHYTEC FlashTools98 for Windows and the Keil EK51 Software Evaluation Development Tool Chain Note: The PHYTEC Spectrum CD includes the electronic version of the English miniMODUL-537 Hardware Manual Hinweis: Die PHYTEC Spectrum CD beinhaltet die elektronische

hd6475378

Abstract: HD6435378 OMC932723297 CPU H8/532 H8/532 Hitachi H8/532 Hitachi DSA0044 HD6475378F h8-532
Contextual Info: OMC932723297 Hitachi Single-Chip Microcomputer H8/537 HD6475378, HD6435378 Hardware Manual ADE-602-065 Preface The H8/537 is a high-performance single-chip Hitachi-original microcomputer, featuring a highspeed CPU with 16-bit internal data paths and a full complement of on-chip supporting modules.

scr 2 22m

Abstract: BT 151 PIN DIAGRAM HS538ESC02H SCR TRIGGER PULSE 3 phase BT 136 PIN DIAGRAM DTCR-1 pin diagram of BF 337 transistor HD6475378F 5.1 circuit diagram schematics H8 hitachi assembler
Contextual Info: OMC942723155 Hitachi Single-Chip Microcomputer H8/537 HD6475378, HD6435378 Hardware Manual ADE-602-065 Preface The H8/537 is a high-performance single-chip Hitachi-original microcomputer, featuring a highspeed CPU with 16-bit internal data paths and a full complement of on-chip supporting modules.

diode SR 315

Abstract: sfh 482 diode E7800 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 tci 537 Q62703-Q1667
Contextual Info: SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 fet06092 fet06091 fet06090 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 537

IC 2025

Abstract: transistor 1203 low power fm audio transmitter fm mixer converter GSM Transceiver analog 1ghz modulator TM 1222 transistor for RF amplifier and mixer TM 1298 Frequency Generator 1GHz
Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications Functional index PAGE Advanced telephony services ICs PCD3316 Caller-ID on Call Waiting CIDCW receiver 537 Front-ends and Paging UAA3500HL Pager receiver 2319 SA1620 Low voltage GSM front-end transceiver

LTC4230

Abstract: undervoltage release
Contextual Info: DEMO CIRCUIT 537 QUICK STARTLTC4230 GUIDE LTC4230 Triple Hot Swap Controller with MultifuncDESCRIPTION Demonstration circuit DC537A is designed to evaluate the performance of the LTC4230 Triple Hot Swap Controller with multifunction current control. The board demonstrates all possible operation

Hitachi DSA002758

Contextual Info: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537 1st. Edition Features • Low on-resistance R DS on = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2802 Absolute Maximum Ratings (Ta = 25°C)

IDA1146

Contextual Info: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDSk,n, = 0. 2 0 typ. Vos = 4 V, ID= 100 mA • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK GO 1142 1. Source 2. Gate 3. Drain ADE-208-537

T099-METAL

Abstract: 005ST S0812 LF353 APPLICATION NOTES 353B DDE21725 LF353 LF353 APPLICATION u192 CS08
Contextual Info: 7^5^537 OQBg^S 5 LF153/A/B LF253/A/B LF353/A/B SGS-THOMSON !Q=D 3 0E S 6 S-THOMSON D J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

Contextual Info: 7^5^537 00234^1 S • T ^ - I S S G S -T H O M S O N T L 0 8 2 E L H O T M iO O S S G S-TH0MS0N T L 0 8 2 A - T L 0 8 2 B 30E » J-FET INPUT DUAL OP-AMPs ■ LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT

2561 d

Abstract: 5537M 2561d
Contextual Info: Signetics 5537 Sample-and-Hold Amplifier Product Specification Military Linear Products DESCRIPTION Tha 5 537 m o no lith ic sa m pla-and-hold a m plifier co m bin e s the b e st fe a tu re s of ion-im planted J F E T s w ith b ip o lar devices to obta in high accuracy, fa st acquisition

fet n-channel pin configuration

Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Contextual Info: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage

SSD1606

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.

PSR 368-7iR

Abstract: PSR 122.5-7 trf 740 PSa 55-7 5A7-7ir 245-7iR 4071 537
Contextual Info: PSR, PSB, NSR PSR, PSB, PSC series • • • • • • • • • • • • O u tp u t pow er 10.288 W Extremely wide input voltage range Power MOS-FET technology Large number o f options providing unlimited applications Low input to output differential voltage

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

UM0381

Abstract: programmer st10f272 RH3 439 ST10F272 OSC32 ST10F276 CAN bit timing st10 Bootstrap ACC20 ST10 half adder
Contextual Info: UM0381 User manual ST10F272 Introduction This manual describes the functionality of the ST10F272 devices. An architectural overview describes the CPU performance, the on-chip system resources, the on-chip clock generator, the on-chip peripheral blocks and the protected bits.

Contextual Info: Back to FETs POWER MOSFET N CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation | T A = 25°C

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

K1637

Abstract: 2SK1637
Contextual Info: 2SK1637,2SK2422 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow on-resistance • H igh speed sw itching • Low drive current • N o secondary breakdow n • Suitable for sw itching regulator and D C-D C converter

fet free

Abstract: SHD226007
Contextual Info: SENSITRON SEMICONDUCTOR SHD226007 TECHNICAL DATA DATA SHEET 704, REV. - N-Channel Enhancement Mode Vertical DMOS FET œ œ œ œ œ œ œ Free From Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability

IC LF351

Contextual Info: • TTSTSB? DOSSTbO b LF151/A/B LF251/A/B LF351/A/B SGS-THOMSON iU S G 30E S - THOMSON T> J-FET INPUT SINGLE OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

Contextual Info: Back to FETs NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage

Contextual Info: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS

Contextual Info: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature