NESY140 Search Results

Contextual Info: Back to FETs 0 /V E F ^ IP NESY140 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)

Contextual Info: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS

Contextual Info: 0 /V E F ^ IP NESY140 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted) P A R A M E T E R S / T EST C O N D IT IO N S

NESY140

Abstract: NESYM140 L038
Contextual Info: NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE M AXIM UM RA TING S Tc = 25°C unless otherwise noted PA R A M ETER S/TEST CO NDITIO NS

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100