5362000B Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I 5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns 5362000B-8 . 80ns

Contextual Info: U,'.V'w i f 5362000B 8MByte 2M X 36 CMOS DRAM Module General Description Features The SM 5362000B is a high perform ance, 8 -megabyte dynam ic RAM m odule organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line mem ory module (SIMM) package.

KMM5362000B

Abstract: EL354 kmm5362000b-8 KMM5362000B7
Contextual Info: DRAM MODULES 5362000B/BG 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc ÍRC 60ns 15ns 110ns 5362000B-7 70ns 20ns 130ns 5362000B-8 80ns 20ns 150ns 5362000B-6 • • • • • • • The S am sung 5362000B is a 2M b its x 36 D ynam ­