530MHZ Search Results

vhf high gain transistor

Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
Contextual Info: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i

VF10BUS

Abstract: A17511
Contextual Info: VF10BUS 注文コード No. N A 1 7 5 1 三洋半導体データシート N VF10BUS 1 Channel EMI Filter with ESD Protection 特長 ・ EMI Filter 1 channel 対応 fc=530MHz ・ IEC61000-4-2 にて接触放電 8kV 保証 ・ 超小型・薄型パッケージ (1.0mm x 0.6mm × 0.27mm) ・ ハロゲンフリー対応

complementary symmetry amplifier 2-30 MHz ssb driver applications

Abstract: 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409
Contextual Info: LTC5584 30MHz to 1.4GHz IQ Demodulator with IIP2 and DC Offset Control Description Features I/Q Bandwidth of 530MHz or Higher n High IIP3: 31dBm at 450MHz, 28dBm at 900MHz n High IIP2: 70dBm at 450MHz, 65dBm at 900MHz n User Adjustable IIP2 to >80dBm n User Adjustable DC Offset Null

rd70huf2

Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
Contextual Info: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF

M68732EH

Contextual Info: MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY

Contextual Info: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)

mitsubishi L200

Abstract: c14 fet
Contextual Info: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)

transistor W66

Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
Contextual Info: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)

HA5022

Abstract: HA5022EVAL HFA1205 HFA1245 HFA1245IB HFA1245IP
Contextual Info: HFA1245 S E M I C O N D U C T O R Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current. . . . . . . . . . . . . . . . 5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary

RD70 HUF2

Abstract: W105 TRANSISTOR ML1 RD70HUF2
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF

VF10BUS

Contextual Info: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)

177J

Abstract: MOS 3020 RD35HUF2 w18 transistor
Contextual Info: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON

Contextual Info: & HFA1245 Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current.5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary

rd70huf2

Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION

advantage of fm transmitter two stage

Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
Contextual Info: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by

W2L14Z225M

Abstract: LLA219C70G225M LTC5569 LTC2271 LTC5584 LTC5585
Contextual Info: LTC2271 16-Bit, 20Msps Serial Low Noise Dual ADC FEATURES DESCRIPTION n The LTC 2271 is a 2-channel, simultaneous sampling 16-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. It is perfect for demanding communications applications with AC performance that

CDFP3-F14

Abstract: la 4507 HS SMD 5962R9858101VXC HS-1254RH HS9-1254RH-Q
Contextual Info: HS-1254RH PRELIMINARY Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable April 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-1254RH is a ±5V, Rad Hard, monolithic, dual, current feedback amplifier that provides highly reliable

CDMA450

Abstract: KFX6555FR
Contextual Info: SAW FILTER KFX6555FR TECHNICAL DATA SPECIFICATIONS FOR SAW DUPLEXER RF Duplexer for CDMA450 A C B High stability and reliability. No adjustment. Low insertion loss and deep stop band attenuation. DIM MAXIMUM RATINGS A B C D E 3.7 D UNIT Input Signal Level

ADS902

Contextual Info: OPA688 OPA 688 OPA 688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV

Contextual Info: 1/1 001-02 / 20050303 / e9616_mem_t_s1.fm EMC Components MEM-T Series MEM2012T Type 3-Terminal Filters for Signal Line and DC Power Line SMD FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability.

Contextual Info: 1/2 3-terminal Filters(SMD) For Signal Line Conformity to RoHS Directive MEM Series MEM2012T-S1 Type FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, and crosstalk generation is prevented.

Contextual Info: 579MHz SAW Filter 26MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN57901 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �

Burr-Brown HA-5002

Abstract: KT-350
Contextual Info: B U R R -B R O W N OPA688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV

Contextual Info: HFA 1245/883 Semiconductor PRELIMINARY Dual, High Speed, Low Power, Video Operational Amplifier with Output Disable Juen 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.