524288 Search Results

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

27c040-12

Contextual Info: SMJ27C040 524288 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046B - NOVEMBER 1992 - REVISED SEPTEMBER 1997 Organization . . . 524288 by 8 Bits Single 5-V Power Supply Industry Standard 32-Pin Dual-In-line Package All Inputs/Outputs Fully TTL Compatible

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

Contextual Info: Ordering number : EN8S6089A CMOS LSI No. 5K5089A SAXYO LC374100RP, RM-10/LC374100RP, RM-20LV 4 MEG 524288 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100RP, RM-10 and LC374100RP, RM-20LV are 4 1 94304-bit M ask Program m able Read Only

HN62444N

Abstract: hn62444
Contextual Info: ADE-203-401A Z HN62444N Series 262144-word x 16-bit/524288-word × 8-bit CMOS Mask Programmable ROM Rev. 1.0 Jun. 20, 1995 The HN62444N is a 4-Mbit CMOS maskprogrammable ROM organized either as 262144 words by 16 bits or as 524288 words by 8 bits. Realizing low power consumption, this memory is

HM658512LP-10V

Abstract: HM658512LP-12 HM658512-10 HM658512LP-8 HM658512LP10V HM658512 HM658512LP-10 HM658512DP-8 HM658512LFP-12 HM658512DP-10
Contextual Info: HM658512 Series Maintenance only 524288-word x 8-bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed – Access time CE access time: 80/100/120 ns – Cycle time Random read/write cycle time: 130/160/190 ns

5609 transistor

Abstract: DATASHEET 5609 DATASHEET 5609 transistor transistor 5609 pin configuration transistor 5609 5609 t 5609 c 5609 t transistor 5609 datasheet z80
Contextual Info: Ordering number : EN*5609A CMOS IC LC374100SM, ST 4 MEG 524288 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100SM and LC374100ST are 524,288-word × 8-bit organization (4,194,304-bit) mask programmable

Contextual Info: HN62454 Series 524288-word X 8-bit/ 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-402A Z Rev. 1.0 May. 9,1996 Description T he H N 62454 is a 4-M bit CM O S m ask-P rogram m able R O M o rganized eith er as 262144 w ords by 16 bits or 524288 w ords by 8 bits. R ealizing low p o w er consum ption, this m em ory is allow ed for battery operation.

Contextual Info: HN62448N Series 524288-word X 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 2 1 ,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-word by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the

Contextual Info: HN62448 Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-397B Z Rev. 2.0 Oct. 2,1996 Description The Hitachi HN62448 is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the m ost suitable to th

Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

Contextual Info: AKN62314B Series AKN62324B Series 524288-Word x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION A K N 62314B , A K N 6 2 3 2 4 B Series is a 4-Mbit C M O S mask- program able R O M organized as 524288-w ord x 8-bits. It can be 32 2 31 □ A18 A 15Q 3 30 □

Contextual Info: fc>6 18 wa W23C4096 IVinbond 512K X 8 CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W23C4096 is a high speed, low power mask-prpgrammable read-only memory organ­ Standby: 25¿¿W(typ.) ized as 524288X8 bits • Low power consumption:

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

cj cl a17

Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector

Contextual Info: HM628512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-640A Z Rev. 1.0 Dec. 2, 1996 Description The Hitachi HM628512A is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.5 Jim Hi-CMOS process technology. The

HM628512

Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,

Contextual Info: HN62W5016N Series 524288-word x 32-bit/1048576-word x 16-bit CMOS MASK Programmable ROM HITACHI Preliminary Description The HN62W5016N is a 16-Mbit CMOS mask-programmable ROM organized either as 524,288-word by 32-bit or as 1,048,576-word by 16-bit. Realizing low power consumption, this memory is allowed for

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HN62448N Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 21,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the

HM658512

Abstract: hitachi 1002 HM658512LP-12 HM658512LP-10V
Contextual Info: HM658512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed - Access time C E access time: 80/85/KM1/120 ns - Cycle time Random read/write cycle time: 130/160/190 ns • Low power - 250 m W typ active

Contextual Info: HM628511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-762 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM628511H Series is an asyncronous high speed static RAM organized as 512-k wordx 8-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It

Contextual Info: HN62448I Series 524288-word x 16-bit/1048576-word X 8-bit CMOS Mask Programmable ROM HITACHI A D E -2 0 3 -7 7 2 A Z R ev. 1.0 A p r. 2 4, 1997 Description The Hitachi HN62448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has a high speed normal access time of 100 ns. It is suitable for