5242 Search Results

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

27c040-12

Contextual Info: SMJ27C040 524288 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046B - NOVEMBER 1992 - REVISED SEPTEMBER 1997 Organization . . . 524288 by 8 Bits Single 5-V Power Supply Industry Standard 32-Pin Dual-In-line Package All Inputs/Outputs Fully TTL Compatible

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

Contextual Info: Ordering number : EN8S6089A CMOS LSI No. 5K5089A SAXYO LC374100RP, RM-10/LC374100RP, RM-20LV 4 MEG 524288 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100RP, RM-10 and LC374100RP, RM-20LV are 4 1 94304-bit M ask Program m able Read Only

HN62444N

Abstract: hn62444
Contextual Info: ADE-203-401A Z HN62444N Series 262144-word x 16-bit/524288-word × 8-bit CMOS Mask Programmable ROM Rev. 1.0 Jun. 20, 1995 The HN62444N is a 4-Mbit CMOS maskprogrammable ROM organized either as 262144 words by 16 bits or as 524288 words by 8 bits. Realizing low power consumption, this memory is

Contextual Info: KODENSHI CORP 25E D mmmm • 5242bOA DQDQ32S T U/ \ A-o/~ as- S O L A R C E L L S \LOW ILLUMINATION TYPE/ flU tttfiS i < s 7 t$ 7 L h tV .m $ -* W M Z itz> Z t t 'X ' t DIMENSIONS (Unit: mm i t . SSC-8-85L KODENSHI,S Solar Cells for calculators are small in size but

LT 5242

Abstract: LT 5242 H
Contextual Info: F2Z L U — + f — ^ ^ 5242 L 0 fi 0000127 S • 2 SE D KODENSHI CORP "f^ l-fT -S 7 -0 5 - LA S E R D E T E C T O R S a g » K ii« f lt e HPI-2263 iv h y - f t f — 3 > P IN ff2 7 * K T 'T o DIMENSIONS 2 '3 O T * j t B A < l ^ - y y ± C » d l S * l T l '*

Contextual Info: KODENSHI CORP ’ 25E D HPI-23F Sn • T '- Lj-}-i 3 5242L0a G D Q O i n b ■ ftW * DIMENSIONS (Unit: mm) <n'> i; n > p m $ 7 * * ? ■ < * - KT'-fo m k n m x - m m ^ ^ •c to The HPI-23F is a high-speed, high-output silicon PIN photodiode mounted in a clear sideiooking package. The

Contextual Info: KODENSHI CORP' 55E D - 7 -=E V a - M Z , 5242f c>0a 0000331 4 • "N ' A - 0 1 - 2 ? DIMENSIONS Unit: mm b & P S <7)±H SSB-12-280L y A tiT i'3 » fc « > , i t t s t t * ' * * <> m L*to 430 9 ftS . 10 sr =1- m 30 20 KODONSHI’S Solar Cell Modules convert solar energy

HM658512LP-10V

Abstract: HM658512LP-12 HM658512-10 HM658512LP-8 HM658512LP10V HM658512 HM658512LP-10 HM658512DP-8 HM658512LFP-12 HM658512DP-10
Contextual Info: HM658512 Series Maintenance only 524288-word x 8-bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed – Access time CE access time: 80/100/120 ns – Cycle time Random read/write cycle time: 130/160/190 ns

Contextual Info: pr k vo ud e n s h i CO’RP 25E ]> S5M2b0a 0000037 if • HYBRID A SSE M B LIE S t r A P P L IC A T IO N : Optical Remote Controller O P T IC R E C E IV E R M O D U L E S <Ta=25’c 5242^08 □□□□□3 a b - V / - 6 7 ptic Heceiver ABS£SUSS1 25E D

5609 transistor

Abstract: DATASHEET 5609 DATASHEET 5609 transistor transistor 5609 pin configuration transistor 5609 5609 t 5609 c 5609 t transistor 5609 datasheet z80
Contextual Info: Ordering number : EN*5609A CMOS IC LC374100SM, ST 4 MEG 524288 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100SM and LC374100ST are 524,288-word × 8-bit organization (4,194,304-bit) mask programmable

Contextual Info: HN62454 Series 524288-word X 8-bit/ 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-402A Z Rev. 1.0 May. 9,1996 Description T he H N 62454 is a 4-M bit CM O S m ask-P rogram m able R O M o rganized eith er as 262144 w ords by 16 bits or 524288 w ords by 8 bits. R ealizing low p o w er consum ption, this m em ory is allow ed for battery operation.

Contextual Info: HN62448N Series 524288-word X 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 2 1 ,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-word by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the

Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

Contextual Info: AKN62314B Series AKN62324B Series 524288-Word x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION A K N 62314B , A K N 6 2 3 2 4 B Series is a 4-Mbit C M O S mask- program able R O M organized as 524288-w ord x 8-bits. It can be 32 2 31 □ A18 A 15Q 3 30 □

Contextual Info: fc>6 18 wa W23C4096 IVinbond 512K X 8 CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W23C4096 is a high speed, low power mask-prpgrammable read-only memory organ­ Standby: 25¿¿W(typ.) ized as 524288X8 bits • Low power consumption:

Contextual Info: W27E040 sSSSs E lectronics Corp. 512K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 x 8 bits that operates on a single 5 volt power supply. The W27E040

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

cj cl a17

Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector

Contextual Info: HM628512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-640A Z Rev. 1.0 Dec. 2, 1996 Description The Hitachi HM628512A is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.5 Jim Hi-CMOS process technology. The

HM628512

Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,

Contextual Info: HN62W5016N Series 524288-word x 32-bit/1048576-word x 16-bit CMOS MASK Programmable ROM HITACHI Preliminary Description The HN62W5016N is a 16-Mbit CMOS mask-programmable ROM organized either as 524,288-word by 32-bit or as 1,048,576-word by 16-bit. Realizing low power consumption, this memory is allowed for