524,288 X 8 BIT Search Results

A23W8000

Abstract: A23W8000F A23W8000H A23W8000M QFP-44L A1739
Contextual Info: A23W8000 Preliminary 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Document Title 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue March 17, 1999 Preliminary March, 1999, Version 0.0

11 ak 30 a4

Abstract: 42-PIN 44PIN 44-PIN DIP42-P-600-2 MSM538002E
Contextual Info: O K I Semiconductor MSM538002E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538002E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit or 1,048,576-word x 8-bit configurations. The MSM538002E

Hitachi DSA0088

Abstract: HM51 HM51W4800C
Contextual Info: HM51W4800A/AL Series HM51W4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory The Hitachi HM51W4800A/AL, HM51W4800C/ CL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and

A23W9308L

Abstract: A23W9308M A23W9308 A23W9308H
Contextual Info: A23W9308 Preliminary 524,288 X 8 BIT CMOS MASK ROM Document Title 524,288 X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 2, 1999 Preliminary November, 1999, Version 0.0 AMIC Technology, Inc.

42-PIN

Abstract: 44PIN 44-PIN DIP42-P-600-2 MSM538032E
Contextual Info: O K I Semiconductor MSM538032E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI M SM538032E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538032E

um23c8100

Abstract: UM23C8100F
Contextual Info: UM23C8100 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Features • ■ ■ ■ 524,288 x 16/1,048,576 x 8 bit organization Single +5V power supply Access time: 120ns max. Current: Operating: 50mA (max.) Standby: 50 p A (max.) ■ Three-state outputs for wired-OR expansion

11 ak 30 a4

Abstract: 42-PIN 44-PIN DIP42-P-600-2 MSM531602C MSM538002E MSM538022E
Contextual Info: O K I Semiconductor MSM538022E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI M SM538002E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit or 1,048,576-word x 8-bit configurations. The MSM538002E

Contextual Info: M O SEL VI TELI C V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash

TC574000AD-150

Abstract: TC574000AD-120 TC574000AD
Contextual Info: TOSHIBA TC574000AD-120, -150 SILICON STACKED GATE CMOS 524,288 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC574000AD is a 524,288 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.

HM514800JP8

Contextual Info: HM514800 Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION H M 514800JP Series The Hitachi HM514800 are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM514800 have realized higher density, higher performance and various func­

DIP42-P-600-2

Abstract: MR27V852D MR27V852DMA MR27V852DRA MR27V852DTP
Contextual Info: ¡ Semiconductor 1A MR27V852D 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit.

MSM27C852CZ

Abstract: DIP42-P-600-2
Contextual Info: ¡ Semiconductor 1A MSM27C852CZ 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MSM27C852CZ is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit.

MSM27C452CZ

Contextual Info: ¡ Semiconductor 1A MSM27C452CZ 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MSM27C452CZ is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.

MR27V852D

Abstract: DIP42-P-600-2 MR27V852DMA MR27V852DRA MR27V852DTP
Contextual Info: ¡ Semiconductor 1A MR27V852D 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit.

Contextual Info: O K I Semiconductor MSM534002B 262,144-Word x 16-Bit or 524,288-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM534002B is a high-speed CMOS Mask ROM that can electrically switch between 262,144word x 16-bit and 524,288-word x 8-bit configurations. The MSM534002B operates on a single 5.0 V power

Contextual Info: UM23L4101 PRELIMINARY 524,288 X 8 BIT LOW VOLTAGE CMOS MASK ROM Features • ■ ■ ■ 524,288 x 8-bit organization Single +3V power supply Access time: 250 ns max. Current: Operating: 15mA (max.) Standby: 10 ¿¿A (max.) ■ Three-state outputs for wired-OR expansion

Contextual Info: HM514800A/AL, HM51S4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514800A are CM OS dynamic RAM orga­ nized as 524,288-word x 8-bit. HM514800A have realized higher density, higher performance and various functions by

12ah3

Abstract: 12AH-3 TDH1
Contextual Info: April 1994 Edition 2.0 FUJITSU DATA SHEET MB82208-20/-25 CMOS 4M-BIT HIGH SPEED SRAM 524,288-WORD x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82208 is 524,288-word x 8-bit high speed static random access memory fabricated with CMOS technology.

TC574000DI

Contextual Info: II 524,288 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION The TC574000DI is a 524,288 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC574000DFs access time is 150ns, and

o/V29C51400T/V29C51

Contextual Info: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with

Contextual Info: five 10 1992 NEC JJPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.

MSM27C402CZ

Contextual Info: ¡ Semiconductor 1A MSM27C402CZ 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C402CZ is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MSM27C40

MR27V402D

Abstract: MR27V402DMP MR27V402DRP MR27V402DTP
Contextual Info: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D

Contextual Info: O K I Semiconductor MSM5 1V4800 /SL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4800/SL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM51V4800/SL is OKI's CMOS silicon gate process