524,288 X 8 BIT Search Results

A23W8000

Abstract: A23W8000F A23W8000H A23W8000M QFP-44L A1739
Contextual Info: A23W8000 Preliminary 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Document Title 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue March 17, 1999 Preliminary March, 1999, Version 0.0

42-PIN

Abstract: 44PIN 44-PIN DIP42-P-600-2 MSM538032E
Contextual Info: Semiconductor MSM538032E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538032E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538032E

MSM538002E

Abstract: 42-PIN 44PIN 44-PIN DIP42-P-600-2
Contextual Info: Semiconductor MSM538002E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538002E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit or 1,048,576-word x 8-bit configurations. The MSM538002E

MSM538032E

Abstract: 42-PIN 44PIN 44-PIN DIP42-P-600-2
Contextual Info: Semiconductor MSM538032E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538032E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538032E

MSM538022E

Abstract: MSM531602C 42-PIN 44-PIN DIP42-P-600-2 MSM538002E
Contextual Info: Semiconductor MSM538022E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538002E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit or 1,048,576-word x 8-bit configurations. The MSM538002E

LH534K00D-15

Contextual Info: CM OS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534K00 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

Contextual Info: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES • 524,288 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: DESCRIPTION The LH534400A is a mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH534700 is a4 M -b it mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.)

Contextual Info: O K I Semiconductor MSM27C822ZB 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C822ZB is an 8 Mb electrically Programmable Read-Only Memory whose configuration can be electrically switched between 524,288 words x 16 bits and 1,048,576 words x 8 bits. The MSM27C822ZB

Contextual Info: O K I Semiconductor MSM27C822ZB 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C822ZB is an 8 Mb electrically Programmable Read-Only Memory whose configuration can be electrically switched between 524,288 words x 16 bits and 1,048,576 words x 8 bits. The MSM27C822ZB

LH534200BD

Abstract: sharp mask rom lh5312 sharp lh53 TAA 691
Contextual Info: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES • 524,288 x 8 bit organization • Access time: 200 ns (MAX.) • Power consumption: DESCRIPTION The LH534200B is a mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

sharp mask rom

Abstract: LH5313 LH531300 LH534300 sharp lh53 LH534300A
Contextual Info: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534300A is a 4M-bit mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

Contextual Info: CMOS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534R00 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 120 ns (MAX.)

MSM538052E

Abstract: 42-PIN 44PIN 44-PIN DIP42-P-600-2
Contextual Info: Semiconductor MSM538052E 524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM538052E is a 524,288-words x 16-bit or 1,048,576-Bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 8 words x 16-bit or 16

Contextual Info: O K I semiconductor MSM538002B/C_ 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM GENERAL DESCRIPTION The MSM538002B/C is high-speed CMOS ROM. Its configuration can be electrically switched between 524,288-word x 16-bit and 1,048,576-word x 8 -bit.

Contextual Info: CMOS 4M 512K x 8 MROM FEATURES DESCRIPTION • 524,288 words x 8 bit organization The LH534700 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

LH534K00D-15

Abstract: DIC14
Contextual Info: C M O S 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534K00 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

Contextual Info: O K I Semiconductor MSM27C802ZB 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Tim e PROM DESCRIPTION The MSM27C802ZB is an 8 Mb electrically Programmable Read-Only Memory whose configuration can be electrically switched between 524,288 words x 16 bits and 1,048,576 words x 8 bits. The MSM27C802ZB

11 ak 30 a4

Abstract: 42-PIN 44PIN 44-PIN DIP42-P-600-2 MSM538002E
Contextual Info: O K I Semiconductor MSM538002E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM538002E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit or 1,048,576-word x 8-bit configurations. The MSM538002E

Hitachi DSA0088

Abstract: HM51 HM51W4800C
Contextual Info: HM51W4800A/AL Series HM51W4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory The Hitachi HM51W4800A/AL, HM51W4800C/ CL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and

A23W9308L

Abstract: A23W9308M A23W9308 A23W9308H
Contextual Info: A23W9308 Preliminary 524,288 X 8 BIT CMOS MASK ROM Document Title 524,288 X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 2, 1999 Preliminary November, 1999, Version 0.0 AMIC Technology, Inc.

ice power 200 asc

Abstract: ICE ICC3 4c27a
Contextual Info: C M O S 4M 512K x 8 Mask Programm able ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534100B is a 4M-bit mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)

42-PIN

Abstract: 44PIN 44-PIN DIP42-P-600-2 MSM538032E
Contextual Info: O K I Semiconductor MSM538032E 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM DESCRIPTION The OKI M SM538032E is a high-speed CMOS Mask ROM that can electrically switch between 524,288-word x 16-bit and 1,048,576-word x 8-bit configurations. The MSM538032E

um23c8100

Abstract: UM23C8100F
Contextual Info: UM23C8100 524,288 X 16/1,048,576 X 8 BIT CMOS MASK ROM Features • ■ ■ ■ 524,288 x 16/1,048,576 x 8 bit organization Single +5V power supply Access time: 120ns max. Current: Operating: 50mA (max.) Standby: 50 p A (max.) ■ Three-state outputs for wired-OR expansion