520MILS Search Results

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

NPT35015

Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

CY7C287

Abstract: CY7C28x CY7C277
Contextual Info: Qualification Report December, 1993, QTP 92441 Version 1.1 CY7C27x/CY7C28x FAB2 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C271/274 32K x 8 PROM Power Switch and Reprogrammable CY7C277/279 Reprogrammable 32K x 8 Registered PROM CY7C285 CY7C286/287 64K x 8 Reprogrammable Fast Column Access PROM