52-PIN TSOP Search Results

ic 40 pin

Abstract: mxic HT
Contextual Info: Noac 20-PIN CERDIP MSI WITH WINDOW (600 mil) MILLIMETERS INCHES 37.34 max 1.470 max B 2.03 [REF] .080 [REF] C 2.54 [TP] .100 [TP] D .46 [Typ.] .018 [Typ.] E 32.99 1.300 F 1-52 [Typ.] .060 [Typ.] Q 3.30 ± .25 .130 ±.010 H .51 (REF] .020 [REF] I 3.94 ± .25

K4S280832B

Contextual Info: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47

Contextual Info: UG58E642 4 4GJ(T)L 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG58E642(4)4GJ(T)L is a 8,388,608 bits by 64 EDO DRAM module. The UG58E642(4)4GJ(T)L is assembled using 32 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ/TSOP package, and

Datasheet-03/HY51174048

Contextual Info: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted

HSD32M64F8R

Abstract: HSD32M64F8R-10 HSD32M64F8R-10L HSD32M64F8R-13 cs359
Contextual Info: HANBit HSD32M64F8R Synchronous DRAM Module 256Mbyte 32Mx64bit , SMM ,16Mx16, 4Banks, 8K Ref. 3.3V Part No. HSD32M64F8R GENERAL DESCRIPTION The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted

Contextual Info: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are

Contextual Info: HB56UW264DB-6B/7B/8B 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-483B Z Rev.2.0 Apr. 19, 1996 Description The HB56UW264DB is a 2M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM51W17805BTT) sealed in TSOP package and 1

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

Contextual Info: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and

Contextual Info: STI324000D2 72-PIN DIMMS 4M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI324000D2 is a 4M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI324000D2 consist of eight CMOS 2M x 8 bit DRAMs in 28pin TSOP package mounted on a 72-pin glass-epoxy substrate.

Contextual Info: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and

4Mx4 DRAM

Contextual Info: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP

Contextual Info: A23L36166/A23L361662 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Preliminary Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue September 15, 2008 Preliminary 0.1 Add 56-pin TSOP 1 package type

AM29F080

Abstract: EDI7F33IMC
Contextual Info: EDI7F433IMC 4x1Megx32 4x1Megx32 Flash Module The EDI7F33IMC is organized as four banks of 1 meg x 32. The module is based on AMDs AM29F080 - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 90 and 150ns

1mx8

Abstract: EDI7F4341MV E28F008S3
Contextual Info: EDI7F4341MV 4 x 1 MEG x 32 FLASH MODULE FEATURES DESCRIPTION • 4 x 1 Meg x 32 The EDI7F4341MV is organized as four banks of 1 Meg x 32. The module is based on Intel's E28F008S3 - 1 Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

EDI7F342MC

Abstract: LH28F016SU
Contextual Info: EDI7F342MC 2Megx32 2Megx32 Flash Module The EDI7F342MC and EDI 7F2342MC are organized as one and two banks of 2Meg x 32 respectively. The modules are based on Sharp's LH28F016SU-2Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate Block Diagrams

28F008S3

Abstract: EDI7F341MV
Contextual Info: EDI7F341MV White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MV and EDI7F2341MV are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's 28F008S3 - 1Mx8 Flash device in TSOP packages

20 led VU meter

Abstract: MSC23CV232A-60BS4 MSC23CV232A-80BS4 00-200-14
Contextual Info: O K I Semiconductor IV1SC23CV232A-XXBS4 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV232A-xxBS4 is a fully decoded 2,097,152-w ord x 32-bit CMOS Dynamic Random Access M emory M odule com posed of four 16-Mb DRAMs 2M x 8 in TSOP packages

Contextual Info: EDI7F342MV 2 MEG x 32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Meg x 32 respectively. The modules are based on Intel's 28F016S3- 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F342MC 2 MEG x 32 FLASH MODULE DESCRIPTION FIG. 1 BLOCK DIAGRAMS The EDI7F342MC and EDI7F2342MC are organized as one and two banks of 2 Meg x 32 respectively. The modules are based on Intel's E28F016S5 -2 Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate

Flash SIMM 80

Abstract: 4mx32 4mx32 80-pin AM29LV033C 4Mx8 WED7F324XE3SN
Contextual Info: WED7F324XE3SN White Electronic Designs 4Mx32 FLASH MODULE DESCRIPTION FIG. 1 The WED7F324XE3SN is organized as a 4Mx32 flash module. The module is based on AMDs AM29LV033C 4Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM