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51L2200 Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb Contextual Info: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.	Original	51l2800 5sya1103-01 51l2600 51l2200 +5ch-5600 igct abb 5stp 5sdd igct abb high power igct abb	PDF
5SDD51L2200 Abstract: k 175 parameters Contextual Info: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current	OCR Scan	51l2800 51l2600 51l2200 5sya1103 +3ch-5600 5sdd51l2200 k 175 parameters	PDF

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51L2200

Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb
Contextual Info: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.

Original

51l2800 5sya1103-01 51l2600 51l2200 +5

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5SDD51L2200

Abstract: k 175 parameters
Contextual Info: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current

OCR Scan

51l2800 51l2600 51l2200 5sya1103 +3

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