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Eaton Corporation NRCE151L2800B1KO - Bulk (Alt: NRCE151L2800B1KO)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NRCE151L2800B1KO	Bulk		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
Mouser Electronics	NRCE151L2800B1KO					1 $0.29 10 $0.25 100 $0.17 1000 $0.13 10000 $0.13	Get Quote
Eaton Corporation NRCE151L2800B1KS - Bulk (Alt: NRCE151L2800B1KS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NRCE151L2800B1KS	Bulk		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
Mouser Electronics	NRCE151L2800B1KS					1 $0.29 10 $0.25 100 $0.17 1000 $0.13 10000 $0.13	Get Quote
Eaton Electronics NRCE151L2800B1KO Nrce Ntc, 15 Ohm, 2800 Beta/ Bulk; \|Eaton Electronics NRCE151L2800B1KO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NRCE151L2800B1KO	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
RS	NRCE151L2800B1KO	Bulk		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.30	Get Quote
Eaton Electronics NRCE151L2800B1KS Nrce Ntc, 15 Ohm, 2800 Beta/ Bulk; \|Eaton Electronics NRCE151L2800B1KS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NRCE151L2800B1KS	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
RS	NRCE151L2800B1KS	Bulk		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.30	Get Quote
Eaton Bussmann NRCE151L2800B1KO NTC Thermistors NRCE family, 15 ohm, L Tol., O Lead, 2800 Beta, K Beta Tol., B1 Beta Def.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	NRCE151L2800B1KO				2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now

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51L2800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
51L2200 Abstract: IGCT ABB 5STP 5SDD igct abb 51L2800 high power igct abb Contextual Info: VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 mΩ Ω 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.	Original	51l2800 5sya1103-01 51l2600 51l2200 +5ch-5600 igct abb 5stp 5sdd igct abb high power igct abb	PDF
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V mΩ 5SDD 51L2800 Doc. No. 5SYA1103-01 Feb. 05 • Patented free-floating silicon technology • Very low on-state losses • High average and surge current.	Original	51l2800 5sya1103-01 ch-5600	PDF
5SDD51L2200 Abstract: k 175 parameters Contextual Info: Key Parameters V r sm s 2800 V ^ FAVM = 5150 A a 8080 A s 65000 A = 0.77 V ^FRMS ^FSM - Rectifier Diode 5SDD 51L2800 0.082 m ft Ooc. No. 5SYA 1103-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current	OCR Scan	51l2800 51l2600 51l2200 5sya1103 +3ch-5600 5sdd51l2200 k 175 parameters	PDF
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.	Original	51l2800 5sya1103-02 ch-5600	PDF