51C64H Search Results

FPC-40

Abstract: 2sa 1006 equivalents 51C64HL 51C64HL-10 51C64HL-12
Contextual Info: in t e i* 51C64HL HIGH PER FO R M AN CE LOW POW ER RIPPLEMODE 64K X1 CH M O S DYNAMIC RAM 51C64HL-10 51C64HL-12 Maximum A ccess Time ns 100 120 Maximum Column Address A ccess Time (ns) 55 65 0.05 0.05 Maximum CHMOS Standby Current (mA) Ripplemode Operation

Contextual Info: in te i 51C64H HIGH PERFORMANCE RIPPLEMODE 64K X 1 CHMOS DYNAMIC RAM 51C64H-8 51C64H-10 51C64H-12 Maximum Access Time ns 80 100 120 Maximum Column Address Access Time (ns) 45 55 65 Ripplemode Cycle Time (ns) 55 65 75 • Fast “ Usable Speed” ■ Ripplemode Operation

Contextual Info: in te i* 51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 64K X1 CHMOS DYNAMIC RAM 51C64HL-10 51C64HL-12 Maximum Access Time ns 100 120 Maximum Column Address Access Time (ns) 55 65 0.05 0.05 Maximum CHMOS Standby Current (mA) Ripplemode Operation Low Power Data Retention

51C64H

Abstract: 51C64H-10 51C64H-12 51C64H-8
Contextual Info: irrte1 51C64H HIGH PERFORMANCE RIPPLEMODE 64K X 1 CHMOS DYNAMIC RAM 51C64H-8 51C64H-10 51C64H-12 80 100 120 Maximum Column Address Access Time ns 45 55 65 Ripplemode Cycle Time (ns) 55 65 75 Maximum Access Time (ns) Ripplemode Operation Fast “ Usable Speed”

DNA 1005

Abstract: 51C64HL 51C64HL-10 51C64HL-12
Contextual Info: PR EU M 8M AR Y in t e i 51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 64K X1 CHMOS DYNAMIC RAM 51C64HL-10 51C64HL-12 Maximum Access Time ns 100 120 Maximum Column Address Access Time (ns) 55 65 0.05 0.05 Maximum CHMOS Standby Current (mA) Ripplemode Operation

c1493

Abstract: 51C64H 51C64H-10 51C64H-12 51C64H-8
Contextual Info: in te i 51C64H HIGH PERFORMANCE RIPPLEMODE 64K X 1 CHMOS DYNAMIC RAM 51C64H-8 51C64H-10 51C64H-12 Maximum Access Time ns 80 100 120 Maximum Column Address Access Time (ns) 45 55 65 Ripplemode Cycle Time (ns) 55 65 75 Ripplemode Operation • Fast “ Usable Speed”

A72D

Contextual Info: in U 51C64HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 64K X1 CHMOS DYNAMIC RAM 51C64HL-10 51C64HL-12 100 120 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHMOS Standby Current (mA) 55 65 0.05 0.05 Ripplemode Operation Low Power Data Retention

Contextual Info: in tg l* 51C64H HIGH PERFORMANCE RIPPLEMODE 64K X 1 CHMOS DYNAMIC RAM 51C64H-8 51C64H-10 51C64H-12 Maximum Access Time ns 80 100 120 Maximum Column Address Access Time (ns) 45 55 65 Ripplemode Cycle Time (ns) 55 65 75 Ripplemode Operation • Fast “ Usable Speed”

16PIN

Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
Contextual Info: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY