517F Search Results

Contextual Info: THE INDUSTRIAL NETWORK COMPANY The N-TRON 517FX Series Industrial Ethernet Switch offers outstanding performance and ease of use. It is ideally suited for connecting Ethernet enabled industrial and/or security equipment and can be optionally configured with advanced Ethernet

Fiber Optic Switch MTBF

Abstract: ICES-003
Contextual Info: THE INDUSTRIAL NETWORK COMPANY The N-TRON 517FX Series Industrial Ethernet Switch offers outstanding performance and ease of use. It is ideally suited for connecting Ethernet enabled industrial and/or security equipment and can be optionally configured with advanced Ethernet

DN200

Abstract: HG20592 UHZ-517F60
Contextual Info: UHZ-517F60 型磁翻柱液位计 技术参数： 测量范围 ： 最小. 2m 至最大. 20m 任选 工作压力 ：1.6MPa 工作温度 ：-20～200℃ 介质密度 ：0.65～2.0g/cm3 过程连接 ： 顶部安装法兰： DN200，PN1.6 平面， 法兰标准：HG20592～20635-97 其它

Contextual Info: 10 ÎÈ ÎB NOTES I. I5X À lJ P B T P I Y d V 'j ' J t ìt t U L 9 4 V -0 U > MATERIAL HOUSING : G.F. \57. PBTP (UL94V-0) TERMINAL : PHOSPHOR BRONZE 1.2 7 £ " J ^ ' j 7 $ y ' T - Z ? ) l 6 .0 6 * m Q m o 3. l^ l- U - r V J U - ^ : 5 3 2 8 -N MATES WITH STRAIN RELIEF OF 5328 SERIES.

Contextual Info: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742F – JUNE 2011 – REVISED APRIL 2013 Concerto Microcontrollers Check for Samples: F28M35H52C 1 F28M35x Concerto MCUs 1.1 Features • Master Subsystem — ARM Cortex™-M3

Contextual Info: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742G – JUNE 2011 – REVISED AUGUST 2013 Concerto Microcontrollers Check for Samples: F28M35H52C, F28M35H22C, F28M35M52C, F28M35M22C, F28M35M20B, F28M35E20B 1 F28M35x Concerto MCUs

LHF12F16

Abstract: wp 146 LH28F128BFHT-PTTL75A
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

command cathode 7 SEGMENT DISPLAY LT 543

Abstract: 82801IBM intel chipset 845 motherboard repair pml 003 am intel chipset 845 motherboard repair circuit 7 SEGMENT DISPLAY COMMON CATHODE lt 543 82801ibm ich9m PC MOTHERBOARD intel 845 circuit diagram mobile MOTHERBOARD CIRCUIT diagram ICH9
Contextual Info: Intel I/O Controller Hub 9 ICH9 Family Datasheet – For the Intel® 82801IB ICH9, 82801IR ICH9R, 82801IH ICH9DH, 82801IO ICH9DO, 82801IBM ICH9M and 82801IEM ICH9M-E, and ICH9M-SFF ICH9-I/O Controller Hubs August 2008 Document Number: 316972-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

Contextual Info: D S 1205S DALLAS SEMICONDUCTOR FEATURES DS 12 0 5 S M ultiKey Chip PIN A S S IG N M E N T • Three secure read/write data partitions of 384 bits each VCCI NC • One non-secure read/write data partition of 512 bits [JQ 1 UJ2 2 15 3 14 RST c m • Secure data cannot be deciphered by reverse engi­

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed

10001XXXXX

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

MPC566

Abstract: 500C 500E J1850 MPC565 be 541e 541E1 55df
Contextual Info: SECTION 14 QUEUED SERIAL MULTI-CHANNEL MODULE 14.1 Overview The MPC565 / MPC566 contains two queued serial multi-channel modules QSMCM_A and QSMCM_B . The QSMCM provides three serial communication interfaces: the queued serial peripheral interface (QSPI) and two serial communications interfaces (SCI1 and SCI2). These submodules communicate with the CPU via

motorola transistor cross reference 6036

Abstract: MPC555 QADC64 1000 watt buck converter scheme uPC 1185 motorola transistor cross reference upc 2581 motorola 1923 circuit diagram of MOD 100 counter using ic 7490 GT Plus Oncore
Contextual Info: MPC555 USER’S MANUAL Revised 1 May 1998  Copyright 1998 MOTOROLA; All Rights Reserved MPC555 USER’S MANUAL Revised 1 May 1998  Copyright 1998 MOTOROLA; All Rights Reserved Paragraph Number TABLE OF CONTENTS Page Number Section 1 OVERVIEW 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

Map 6808

Abstract: MAP 6810 motorola 6810 memory C004 MPC555 MPC556 QADC64 INSTRUCTION SET motorola 6800 6058 S 6C46
Contextual Info: APPENDIX A MPC555 / MPC556 INTERNAL MEMORY MAP The tables below use the following notations. In the Access column: S = Supervisor Access Only U = User Access T = Test Access In the Reset column: S = SRESET H = HRESET M = Module Reset POR = Power-On Reset U = Unchanged

C004

Abstract: MPC555 QADC64 417F
Contextual Info: APPENDIX A MPC555 INTERNAL MEMORY MAP The tables below use the following notations. In the Access column: S = Supervisor Access Only U = User Access T = Test Access In the Reset column: S = SRESET H = HRESET M = Module Reset POR = Power On Reset U = Unchanged