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schematic diagram temperature control oven furnace

Abstract: LNA with AGC LNA x-band X-band GaAs pHEMT MMIC Chip TGA2512
Contextual Info: TGA2512 X Band Low Noise Amplifier Key Features • • • • Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm

Contextual Info: TGA2512 X Band Low Noise Amplifier Key Features • • • • Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm

TGA2512-EPU

Abstract: RF amplifier x-band low noise high gain
Contextual Info: Advance Product Information April 1, 2004 X-Band Low Noise Amplifier TGA2512-EPU Key Features • • • • Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology

Contextual Info: Advance Product Information January 17, 2005 X-Band Low Noise Amplifier TGA2512-EPU Key Features • • • • Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology

x-band mmic lna

Abstract: TGA2512 x-Band High Power Amplifier
Contextual Info: Advance Product Information July 14, 2005 X-Band Low Noise Amplifier TGA2512 Key Features • • • • Typical Frequency Range: 5 - 15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias 0.15 um 3MI pHEMT Technology