514280 Search Results

HM514280AJ7

Abstract: HM514280AJ-7 hm514280
Contextual Info: blE I • m lb 203 0023114 535 ■ H IT S 514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi 514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,

k2131

Contextual Info: O K I Semiconductor MSM5 14280 /SL 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514280/SL is a new generation dynamic RAM organized as 262,144 words by 18 bits. The technology used to fabricate the M SM 514280/SL is OKI's CMOS silicon gate process technology.

RSS0

Contextual Info: O K I Semiconductor MSC23B20-XXBS2/PS2 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B20-xxBS2/D S2 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of two 4-Mb DRAM s in SOJ M SM 514280 packages mounted w ith two 0.2 j x F

Contextual Info: 514280A/AL, HM51S4280A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random A c ce s s Memory • DESCRIPTION ■ FE A TU R ES The Hitachi H M 514280A/AL are C M O S dynamic RAM organized as 262,144-word x 18-bit. HM 514280A/AL have realized higher density, higher performance and various

hm514280

Abstract: HM514280JP8 HM514280ZP-10 F0514
Contextual Info: H M 5 1 4 2 8 0 S e r ie s Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION HM 514280JP Series The Hitachi 514280 are CMOS dynamic RAM orga­ nized as 262,144-word x 18-bit. 514280 have realized higher density, higher performance and various functions by

HM514280AJ7

Abstract: m514280 hm514280 HM514280AJ8 HM514280AZ8 hm514280altt HM514280ALJ8 hm514280aj M514 HM514280AL
Contextual Info: H M 5 1 4 2 8 0 A /A L S e rie s Preliminary H M 5 1 S 4 2 8 0 A /A L S e rie s 262,144-word x 18-bit Dynamic Random Access Memory HITACHI The Hitachi 514280A/AL are CMOS dynamic RAM organ ized as 2 6 2 ,1 4 4 -w o r d x 1 8 -b ii. H M 514280A /A L have realized higher density,

Contextual Info: O K I Semiconductor MSC23B21-XXBS4/DS4 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23B21-xxBS4/D S4 is a fully decoded 524,288-w ord x 36-bit CM OS Dynamic Random Access Memory M odule com posed of four 4-Mb DRAM s in SOJ M SM 514280 packages m ounted w ith eight

skb 7/12

Abstract: 1103022-2 1-1102664-5 2D216 70.10.02.41 ha64 Tyco hts 1-1103640-9 hf123 2-1103000-3 2-1102352-1
Contextual Info: HTS Industrie-Steckverbinder HTS Heavy Duty Connectors HE.32 Kontakteinsätze/Contact inserts Baugröße/Size 10 Kontaktzahlen No. of contacts Schraubanschluss, Federzug-Anschluss, Crimpanschluss für gedrehte HE Crimpkontakte Screw terminal, Spring Clamp terminal,

Contextual Info: O K I Semiconductor 514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the 514280/SL is OKI's CMOS silicon gate process technology.

HM514280AJ7

Abstract: HM514280AZ8 HM514280AJ-7 HM514280AJ-8 HM514280AJ HM514280ATT HM514280AZ HM514280AJ8
Contextual Info: 514280A/AL, HM51S4280A/AL Series Prelim inary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi 514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. 514280A/AL have realized higher density, higher performance and various

Contextual Info: blE D • 4 4 R b 2 0 3 0 0 2 3 3 ^ 1 712 ■ H I T 2 HB56G25636 Series — - HI TA C H I / L O G I C / A R R A Y S / M E M 262,144-Word x 36-Bit High Density Dynamic RAM Module The HB56G25636B/SB is a 256 k x 36 dynamic RAM m odule, m ounted 2 pieces o f 4-M bit DRAM

1106436-4

Abstract: Bolt Torque M32 AMP PBT connector 0-1103057-1 1103022-2 1103096-1 HB 541 74004 2-1103032-3 2-1104012-3
Contextual Info: RoHS Ready Industrie-Steckverbinder Heavy Duty Connectors GLOBAL INDUSTRIAL & COMMERCIAL T YCO E L E C T R O N I C S “ T E C H N O LO GY P O R T F O L I O ” ● Connector Systems / Electromechanical Components ● Antennas, GPS Antennas, Integrated Antenna Systems

E1644

Abstract: stecker DF X22 NFF F 16101 9 pole sub-d male electromechanical catalog rectangular connector HD15S S20DF 0-1103018-1 43120641
Contextual Info: TE Technical Support Center Internet: te.com/help USA: +1 800 522-6752 Canada: +1 (905) 475-6222 Mexico +52 (0) 55-1106-0800 Latin/S. America: +54 (0) 11-4733-2200 Germany: +49 (0) 6251-133-1999 UK: +44 (0) 800-267666 France: +33 (0) 1-3420-8686 Netherlands:

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

SKB 7 04

Abstract: SKB 7 02 crimping rj45 cat5e skb 7/12 bei m25 twinax SKB 7 / 12 M22520/1-01 HA 16 Sti SB 1-16 SCHUKO
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hm514280

Contextual Info: 514280 Series Preliminary 262,144-Word x 18-Bit Dynamic Random A c ce s s Memory • DESCRIPTION 514280JP Series The Hitachi 514280 are C M O S dynamic RAM orga­ nized as 262,144-word x 18-bit. 514280 have realized higher density, higher performance and various functions by

Contextual Info: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 514280BJ / BZ / BFT / BTR - 70 514280BJ / BZ / BFT / BTR - 80 514280BJ / BZ / BFT / BTR - 1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 WORD x 18 BIT DYNAMIC RAM DESCRIPTION

HM51428

Contextual Info: 514280A/AL, HM51S4280A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi 514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. 514280A/AL have realized higher density, higher performance and various

SM511

Contextual Info: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M SM 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50

514280

Abstract: ZIP40-P-475
Contextual Info: O K I Semiconductor M S M 5 1 4 2 8 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the 514280/SL is OKI's CMOS silicon gate process technology.

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment