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Contextual Info: HB56D25636 Series 262,144-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56D25636B is a 256k x 3 6 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM H M 514256JP sealed in SOJ package and 4 pieces of 256k-bit DRAM (H M 51256C P) sealed in PLCC package. An outline of the H B56D25636B is
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hb56d25636144-word36-bitb56d25636b+5514256jp256k-bit51256c72-pinhb56d25636b
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Contextual Info: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM 514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is
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hb56d51236288-word36-bithb56d51236b+4hm514256jp256k-bithm51256cp72-pin
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514256-10
Abstract: HM514256 hitachi HM514256
Contextual Info: HM514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g
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hm514256262144-word514256p514256-10+1hitachi hm514256
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rca thyristor manual
Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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rca thyristor manualhn623258101490 |
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514256
Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
Contextual Info: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying
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262144-word262144-w20-pin514256p+8dp-20na514256zp514256hm514256m514256m 514256hitachi hm514256hm514256-10
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101490
Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ade-40101490p22nhm50464p-12+150464 ram
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6264l
Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
Contextual Info: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B • DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N • DP-18C 2 2 2 6 (0 1 7 6 )
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dp-16bdp-18bdp-18cdp-20n+16dp-20nadp-22n300tt6789h256jp534251jp6264l27c301g27c301fp 101gti2326116asp50464cpls 11mm62256fp02s-0
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27c301
Abstract: HM6788P-25 HM6788
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
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