514175BJ Search Results

Contextual Info: SIEM EN S 256Kx 16-Bit EDO-DRAM 514175BJ -50/-55/-60 256K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 514175BJL-50/-55/-60 Advanced Information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time

Contextual Info: SIEMENS 256k X 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • • • RAS access time: 50 ns -50 version 55 ns (-55 version) 60 ns (-60 version)

SPT0305

Abstract: Q67100-Q2072 Q67100-Q2073 Q67100-Q2100
Contextual Info: 256k x 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced Information • • • • • • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time • Low Power dissipation max. 1100 mW active -50 version

Contextual Info: SIEM EN S 256Kx 16-Bit EDO-DRAM HYB 514175BJ -50/-55/-60 256K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 514175BJL-50/-55/-60 Advanced Information Low Power dissipation max. 1100 mW active (-50 version) max. 1045 mW active (-55 version) max. 935 mW active (-60 version)

Contextual Info: 256K x 16-Bit EDO-DRAM HYB 514175BJ -50/-55/-60 256K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 514175BJL-50/-55/-60 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

Contextual Info: 256 K x 16-Bit EDO-DRAM 514175BJ -50/-55/-60 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 514175BJL-50/-55/-60 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

BT 804

Contextual Info: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

3165805AT-60

Abstract: Q67100
Contextual Info: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60