512KILOBIT Search Results

Contextual Info: SM33216 January 1993 Rev 0 SMART Modular Technologies SM33216 512KBit 16K x 32 CMOS Fast SRAM Module General Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package.

Contextual Info: 512KBit 16K x 32 General S M 33216 CMOS Fast SRAM Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 16Kx4 high speed static RAM

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: HN27512 Series Maintenance Only 512K 64K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed

AP28F512-120

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program

28F512

Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Contextual Info: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read

FM24C512

Abstract: FM24C512-G FM24V05
Contextual Info: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

RG5L51

Abstract: FM25L512 FM25L512-DG
Contextual Info: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AT17C512A

Abstract: AT17A AT17C010A AT17LV512A AT24CXXX ATDH2200E ATDH2225 pdip 24 altera EPC1 ordering AT17C512A-10JI
Contextual Info: Features • Serial EEPROM Family for Configuring Altera FLEX Devices • Simple Interface to SRAM FPGAs • EE Programmable 512-Kbit and 1-Mbit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • Cascadable Read Back to Support Additional Configurations or Future

Contextual Info: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V05

Abstract: FM25V05-G
Contextual Info: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

RG5L51

Contextual Info: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

PC44

Abstract: SO20 VQ44 XC17V00 XC18V00 XC2VP20 XC2VP30 XC2VP40
Contextual Info: XC18V00 Series In-System Programmable Configuration PROMs R DS026 v5.0 April 5, 2004 Features • Product Specification • Dual configuration modes - Serial Slow/Fast configuration (up to 33 MHz) - Parallel (up to 264 Mb/s at 33 MHz) In-system programmable 3.3V PROMs for

a10hc

Contextual Info: HN27C512 Series Maintenance Only 512K 64K x 8-bit UV EPROM • DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low

14255R-400

Abstract: 14235R-2000 FT-x3 transformer echelon FT-x3 14255R echelon FT-x2 003-0457-01C spi eeprom flash programmer schematic neuron 5000 echelon FT-x1
Contextual Info: The FT 5000 Smart Transceiver is our next-generation chip for smart networks. It’s also a key product in the LONWORKS 2.0 platform — the next generation of LONWORKS products designed to greatly increase the power and capability of LONWORKS enabled devices, all while

echelon FT-x3

Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r
Contextual Info: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of

HN27C512G-17

Abstract: SIERA
Contextual Info: Maintenance Only HN27C512 Series 512K 64K x 8-bit UV EPROM • .DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Operating Frequency – Clock-to-Output (tV) of 6 ns Maximum • Flexible, Optimized Erase Architecture for Code + Data Storage Applications

neuron 5000

Abstract: EEPROM I2C neuron 5000 echelon FT-x3 FT-x3 transformer neuron 3120 EIA-481-B ATMEL 14305R-500 14305r 14305 Neuron 3150 programming
Contextual Info: Combined with inexpensive serial memory, the Neuron 5000 Processor provides a lower-cost, higher-performance LONWORKS solution than those based on previous-generation Neuron 3120 and Neuron 3150® chips. Neuron® 5000 Processor The Next-generation Neuron Chip for

Contextual Info: ,iJL . r ’<*i SM23216Z Feb 1992 Rev 0 SMART Modular Technologies SM23216Z 512KBit 16Kx32) CMOS Fast SRAM Module General Description Features The SM23216Z is a high performance, 512-kilobit static RAM module organized as 16K words by 32 bits in a 64-pin ZIP memory module package. The module utilizes

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

32-PIN RAD-PAK FLAT PACKAGE

Contextual Info: 27C512T 512K 64K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization

FM24C512

Abstract: FM24C512-G
Contextual Info: Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion 1010 Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process