512K X 8 HIGH PERFORMANCE CMOS EPROM Search Results

FM27C040

Abstract: 27C010 FM27C040QXXX
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity

NM27C040Q

Contextual Info: National NM27C040 & Semiconductor NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

27C010

Abstract: 27C020 27C080 NM27C040
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C080

Abstract: NM27C040 27C010 27C020
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

512K x 8 High Performance CMOS EPROM

Abstract: 27C010 27C020 27C080 NM27C040
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C020 27C080 A15C NM27C040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

27C010

Abstract: 27C020 27C080 A12C NM27C040
Contextual Info: January 1994 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

27C010

Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

J32AQ

Abstract: NM27C040 VA32A
Contextual Info: tm NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-com patibility with byte-wide

Contextual Info: SEMICONDUCTOR TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

8F08

Contextual Info: NM27C040 03 Semiconductor National ÆM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

M27C040

Abstract: 27C040Q
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide

DS60014

Contextual Info: & 27C512 M icro ch ip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 35mA Active current — 100p.A Standby current

C1995

Abstract: J32AQ NM27C040 VA32A
Contextual Info: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

OT 27C512

Abstract: 27c512 SOIC-28 27C512 microchip
Contextual Info: & 27C512 Microchip _ 512K 64K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (ultraviolet light) Erasable (electrically) Program­ — 120ns access time available • CMOS Technology for low power consumption

27c512p

Contextual Info: & 27C512 M icro ch ip 512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc. 27C512 is a CMOS 512K bit (electrically) Programmable Read Only Memory. The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address

Contextual Info: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs

NM27C512

Contextual Info: NM27C512 53 Semiconductor National NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured in National's latest CMOS split gate EPROM tech­

VT27C512

Abstract: "vlsi technology" jedec-standard
Contextual Info: VT27C512 PRELIMINARY 65,536 X 8 STATIC CMOS EPROM FEATURES DESCRIPTION • 65,536 X 8 bit organization • Current - Operating: 15 mA - Standby: 5 mA The VT27C512 is a 512K-bit high­ performance CMOS Erasable Programmable Read Only Memory organized as 65,536 bytes. It is

Contextual Info: PRELIMINARY F = A IR CH II_ D SEMICONDUCTOR TM N3 >1 O O o FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Read Only Memory. It Is organized as 512K words

Contextual Info: NM27C520 524,288-Bit 64K x 8 Multiplexed Addresses/Outputs OTP CMOS EPROM General Description Features The NM27C520 is a high performance 512K CMOS one-time programmable read only memory (EPROM) manufactured using Fairchild's proprietary CMOS AMG EPROM technology for an

Contextual Info: 4 Megabit CMOS EEPROM DPE128X32V DESCRIPTION: The DPE128X32V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 128K X 32, 256K X 16 or 512K X 8. The module is built with four low-power CMOS 128K X 8

27C256 General Semiconductor

Abstract: NM27C512N 27C010 27C020 27C040 27C080 27C256 C1995 NM27C512
Contextual Info: NM27C512 524 288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 0 8 micron CMOS AMGTM EPROM technology for an excellent combination of speed and economy while providing excellent reliability