512K X 8 Search Results

68S16000

Abstract: AB-020
Contextual Info: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1

M29F040B

Contextual Info: White Electronic Designs WED7Fx325ZXEBSNyyC 2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family PIN CONFIGURATION FEATURES „ 2, 4, and 8MB Density FLASH Modules „ Organized as; 512K x 32, 2 x 512K x 32, and 4 x 512K x 32 „ Based on STmicro's M29F040B 5.0V FLASH Device

Contextual Info: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module The IDT7MB4048 Is a 4-megabit (512K x 8) Static RAM module constructed on a multilayer epoxy laminate (FR-4)

7M4048

Abstract: IDT7M4048
Contextual Info: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs

WED9LAPC2B16P8BC

Abstract: WED9LAPC2C16V4BC
Contextual Info: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SSRAM: 100 MHz • SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array

Contextual Info: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)

2mb 72-pin simm

Abstract: fr 3709 27A3
Contextual Info:  IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of

M29F040B

Abstract: e03g
Contextual Info: WED7Fx325ZXEBSNyyC 2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family FEATURES PIN CONFIGURATION • 2, 4, and 8MB Density FLASH Modules PIN# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 ■ Organized as; 512K x 32, 2 x 512K x 32, and 4 x 512K x 32

fr 3709 z

Contextual Info: IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of

Contextual Info: CYPRESS 512K x 32 Static RAM Module Features Functional Description • High-density 16-megabit SRAM module The CYM1846 is a high-performance 16-megabit static RAM module organized as 512K words by 32 bits. This module is constructed from four 512K x 8 SRAMs

Contextual Info: 4 MEGABIT 512K x 8 CMOS STATIC RAM PLASTIC SIP MODULE IDT7MP4008S FEATURES: DESCRIPTION: • High-density 4 megabit (512K x 8) CMOS static RAM module The IDT7MP4008 is a 4 megabit (512K x 8-bit) high-speed static RAM module constructed on an epoxy laminate surface using six­

fr 3709

Abstract: fr 3709 z 3709
Contextual Info: IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of four chip select lines provides byte access.

80pin simm

Abstract: Am29F040-90 80 pin simm flash Flash SIMM 80 A1267 SL29020-90T A1069 Am29F040
Contextual Info: SL29020-90x 512K X 32 Bits 80-Pin SIMM 5V Only FEATURES GENERAL DESCRIPTION • • • • • • • The SiliconTech’s SL29020-90x is a 512K x 32 bits flash Single In-line Memory Module (SIMM). This module consists of four 512K x 8 bits CMOS flash memory in 32-pin TSOP packages

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

Contextual Info: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

Contextual Info: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 256K, 512K x 32 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View OPTIONS 72-Pin SIMM (DD-5) 256K x 32 (DD-6) 512K x 32 o imïïïïirrffrrmmy^^ 1 PIN#

TOP SIDE MARKING OF MICRON

Abstract: 84 FBGA 84-PIN MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code
Contextual Info: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM MT6V16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW

89C1632

Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

8M624

Contextual Info: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or

89C1632

Abstract: 512K x 8 bit sram 32 pin
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

5962-06203

Abstract: 5962-07210 "rad" sram
Contextual Info: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)

0436A8

Contextual Info: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

MT48LCM32B2

Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
Contextual Info: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard

MX27L4096

Abstract: PM0307 27l41-
Contextual Info: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage