512 TTL PROM Search Results

d 92-02

Abstract: AM27S25 DM77SR476 DM87SR476N J24A D 9202 N24A
Contextual Info: DM77SR476/DM87SR476 CTl National Æà Semiconductor DM77/87SR476 512 x 8 4k-Bit Registered TTL PROM General Description The DM 77/87SR476 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by

DM74S475N

Abstract: DM74S475V J24A V28A
Contextual Info: DM54S475/DM74S475 Egl National æA Semiconductor DM54/74S475 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. Memory enable inputs are provided to control the output states. W hen the device is

74S474

Abstract: DM74S474N DM74S474 DM54S474J DM54S474BJ DM74S474AN J24A N24A 74S474J DM54S474
Contextual Info: DM54S474/DM74S474 ZgA National Mm Semiconductor DM54/74S474 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. Memory enable inputs are provided to control the output states. W hen the device is

C1995

Abstract: DM74S473 DM74S473J DM74S473N DM74S473V J20A 512 ttl prom 9715
Contextual Info: DM74S473 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration A memory enable input is provided to control the output states When the device is enabled the outputs represent the contents of the selected

74S472

Abstract: 74S472 PROM PROGRAMMING dm74s472 DM74S472N 91911 J20A DM74S472AN 472an DM74S472AJ
Contextual Info: DM54S472/DM74S472 National SjM Semiconductor DM54/74S472 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. A memory enable input is pro­ vided to control the output states. When the device is en­

74S473

Abstract: DM74S473AJ DM74S473AN DM74S473N DM74S473V J20A V20A 74s* programming
Contextual Info: DM54S473/DM74S473 yw\National fZA Semiconductor DM54S473/DM74S473 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 w ords by 8 bits configuration. A memory enable input is pro­ vided to control the output states. When the device is en­

DM77

Abstract: DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A
Contextual Info: DM77SR27/DM87SR27 VWA National éH à Sem iconductor DM77/87SR27 512x8 4k-Bit Registered TTL PROM General Description The DM77/87SR27 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by

DM77

Abstract: DM77SR181 DM87SR474BJ DM87SR474J DM87SR474N J24A N24A 474BJ
Contextual Info: DM77SR474/DM87SR474 National à jà Semiconductor DM77/87SR474 5 12x 8 4k-Bit Registered TTL PROM General Description The DM77/87SR474 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by

Contextual Info: CMOS EEPROM KM93C57/KM93C67 2K/4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250/JV (TTL) • User selectable memory organization — 256 x 16 o r 512 x 8 for KM93C67

DM74S571

Abstract: DM74S571N DM74S571V J16A N16A programming TiW PROMs DM74S571J
Contextual Info: DM74S571 S3 National ÆÆ Semiconductor DM74S571 512 x 4 2048-Bit TTL PROM General Description Features This S chottky m em ory is organized in the popular 512 w ords by 4 bits configuration. A m em ory enable input is pro­ vided to control th e output states. W hen the device is en­

Contextual Info: PRELIMINARY KM93C57/KM93C67 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 A (TTL) • User selectable memory organization — 256 x 16 or 512 x 8 for KM93C67

microprogram

Abstract: N3002 jump 74S182 N3001
Contextual Info: Signetics N3001 Microprogram Control Unit Product Specification Logic Products PIN CONFIGURATION FEATURES DESCRIPTION • Schottky TTL process • 45ns cycle time typ. • Direct addressing of standard bipolar PROM or ROM • 512 microinstruction addressability

MB7116E

Abstract: MB7116-W mb7116 MB7116E-W fujitsu 1988 MB711 MB710 fujitsu prom
Contextual Info: June 1990 Edition 3.0 FUJITSU DATA SHEET MB7116E-W/7116L-W PROGRAMMABLE SCHOTTKY2048-BIT READ ONLY MEMORY SCHOTTKY 2048-BIT DEAP PROM 512 WORDS x 4 BITS The Fujitsu M B7116-W is high speed Schottky TTL electrically field programm able read only memory organized as 512 words by 4 bits. With three-state outputs on the MB7116-W, memory

74S475

Abstract: DM74S475N DM74S475V J24A N24A 74s* programming DM74S475
Contextual Info: DM54S475/DM74S475 P5J1 National æ A Semiconductor DM54/74S475 512 x 8 4096-Bit TTL PROM General Description Features This S chottky m em ory is organized in th e popular 512 w ord s by 8 b its configuration. M em ory e nable inputs are provided to control th e o utp ut states. W hen th e device is

82S131

Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the

82S141/8708+prom

Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store

AS-016

Abstract: 82S147 82S147A f0035 AS016 33-OS
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 512 x 8 82SH7A FEATURES DESCRIPTION • Address access time: 75ns max The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the

DM74S474

Abstract: 74S474 74S474 programming DM54S474/DM74S474 74S474+programming -74S474
Contextual Info: DM54S474/DM74S474 \ National Semiconductor DM54/74S474 5 1 2 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. Memory enable inputs are provided to control the output states. When the device is

CY7C225A

Contextual Info: 1CY 7C22 5A CY7C225A 512 x 8 Registered PROM Features • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power • Capable of withstanding greater than 2001V static • High speed discharge — 18 ns address set-up Functional Description

AM27S25

Abstract: DM77 DM77SR476 SR25V SR25B
Contextual Info: DM77/87SR476, DM77/87SR25, DM77/87SR476B, DM77/87SR25B National Semiconductor Corporation DM77/87SR476, DM77/87SR25, DM77/87SR476B, DM77/87SR25B 512 x 8 4k-Bit Registered TTL PROM G eneral Description The D M 77 /8 7 S R 47 6 is an e lectrically program m able

DM74S570AJ

Abstract: 74s570 DM74S570N DM74S570V J16A N16A DM74S570
Contextual Info: DM54S570/DM74S570 National Semiconductor DM54/74S570 5 1 2x4 2048-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 4 bits configuration. A memory enable input is pro­ vided to control the output states. When the device is en­

X 1077 CE

Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store

82s141

Abstract: GDFP2-F24 82S141/BJA 1000U 82S141 philips ue-12
Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store

82s141

Abstract: 512 ttl prom 1000U GDIP1-T24 82S141 philips 82S141/BJA
Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store