51181 Search Results

Contextual Info: SIE M EN S 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50

5118160

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

5118160

Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Contextual Info: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)

SPT0305

Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: m 'i[m24û D02ô4Db 752 m- TOSHIBA 5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: 5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

Contextual Info: 5118160I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-756A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM 51181601 Series are CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118160I

Contextual Info: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )

Contextual Info: E2G0151-18-X2 O K I Semiconductor This version: Oct. 1998 M SM 5118165D/DSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5118165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5118165D/DSL achieves high integration, high-speed operation, and

smd code marking rac

Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC

Contextual Info: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which

HM5118165J6

Contextual Info: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

m5118160

Abstract: m51161 S-024BB
Contextual Info: HM5116160 Series 5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 ¿RAC RAS access time 50 60 70 ns ¿CAC CAS access time 13

TC5118160B

Contextual Info: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • 5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT

5118165

Contextual Info: 5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh HITACHI ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word X 16-bit. It employs the m ost advanced 0.5 Jim CMOS technology for high performance and low power. The H M 5118165 offers

Contextual Info: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The HM 5118165 offers

tc5118180bj

Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
Contextual Info: TOSHIBA 5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ADE-203-634C

Contextual Info: HM5116160 Series 5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634C Z Rev, 3.0 Feb. 21, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The

CD4530

Abstract: M5118160 Nippon capacitors 5118160
Contextual Info: HB56G232 Series, HB56G132 Serie 2,097,152-word x 32-bit High Density Dynamic RAM Module 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-701A Z Rev.1.0 Dec. 27, 1996 Description The HB56G232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (H M 5118160)

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

SIEMENS BST

Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: ADE-203-373 Z 5118165A/AL Series 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary H I TI MA CU Hm I Rev0° m T he H itachi H M 5118165A /A L is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology

SIEMENS BST 68

Abstract: BST50 3118165 SIEMENS BST Q
Contextual Info: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: