51166 Search Results

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M 511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the 511665 is OKI's CMOS silicon gate process technology.

Contextual Info: MITSUBISHI SOUND PROCESSOR ICs 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH [ _ ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER [ DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels o f ALC.

Contextual Info: 511665/L Series 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION The Hitachi 511665/HM 511665L are C M O S dynamic R A M organized as 65,536-word x 16-bit. 511665/11665L have realized higher density, higher performance and vari­ ous functions by employing 0.8 nm C M O S process technol­

HM511664-8

Abstract: HM511664-10 HM511664 HM511664Z HM511664ZP HM511664JP
Contextual Info: HM 511664 S e rie s - Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511664JP Series The Hitachi 511664 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. 511664 have realized higher density, higher performance and various functions by

Contextual Info: O K I Sem iconductor M SM 511664A/AL_ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/A L is a 65,536-word x 16-bit dynam ic RAM fabricated in OKI’s CM O S silicon gate technology. The M SM 511664A/A L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single metal CM OS. The M SM 511664A /A L is

Contextual Info: 511663C Series 65536-word x 16-bit Dynamic RAM HITACHI ADE-203-695 Z Preliminary Rev. 0.0 Dec. 20, 1996 Description The Hitachi H M 511663C Series is a CMOS dynamic RAM organized 65,536-word X 16-bit. H M 511663C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS

Contextual Info: FEATURES AND SPECIFICATIONS Reference Information Product Specification: PS-55357-011 Packaging: Tube Mates With: 54780 Type M receptacle Use With: 51166 code key Designed In: Millimeters Electrical Voltage: 500V Current: 1.0A Contact Resistance: 30 milliohms max.

Contextual Info: 511667C Series IM EDO DRAM 64-kword x 16-bit 256 refresh HITACHI ADE-203-625A (Z) Rev. 1.0 Dec. 20, 1997 Description The Hitachi H M 511667C Series is a CMOS dynamic RAM organized 65,536-word x 16-bit. H M 511667C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS

511664JP

Abstract: HM511664JP HM511664JP8
Contextual Info: 511664 S e r ie s - Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION HM 511664JP Series The Hitachi 511664 are C M O S dynamic RAM orga­ nized as 65,536-word x 16-bit. 511664 have realized higher density, higher performance and various functions by

M511664C

Contextual Info: 511664C Series IM FP DRAM 64-kword x 16-bit 256 refresh HITACHI ADE-203-627A (Z) Rev. 1.0 Dec. 20, 1997 Description The Hitachi H M 511664C Series is a CMOS dynamic RAM organized 65,536-word x 16-bit. H M 511664C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS

7A07

Abstract: w9109 jcs5 tc511665
Contextual Info: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica­ tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

MSM OKI

Contextual Info: O K I Semiconductor M S M 5 1 1 6 6 4 A / A L _ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/AL is a n ew generation dynam ic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the M SM 511664A/AL is OKI's CMOS silicon gate process technology.

M51166P

Abstract: ta625 ALC ic
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH _ ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels of ALC.

51166P

Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels o f ALC.

m511664

Contextual Info: O K I semiconductor MSM 511664_ 65,536-WORD x 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the 511664 is OKI's CMOS silicon gate process technology.

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

Contextual Info: TENTATIVE DATA 65,535 WORD x 15 BIT DYNAMIC RAM D E S CRIPTION T b e T C S l l GkW BJL'BZL is the new g e n e ra tio n dyna^nic R A M o rg an ize d 6 5 ,536 w ords by 16 b its. The T C £ t J6 6 4 0 JL /3 Z .L u tilize s T O S H IB A 'S C M O S S ilic c r. p:.te p rocess tech n ology as weii a s ad van ced

243-11320-15

Abstract: 243-11321-15 243-11020-15 54603-1102 044146 064179 352127-1 044446 054546 064198
Contextual Info: AVX Corporation - Interconnect Division 2MM Hard Metric Cross Reference Guide AMP 100141-1 5100141-1 100141-4 5100141-4 100143-1 5100143-1 100145-1 5100145-1 100147-1 5100147-1 100159-1 5100159-1 100159-9 5100159-9 100161-1 5100161-1 100525-3 100525-9 100526-3

HM511664LJ8

Contextual Info: 511664/L S eries- Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION 511664JP Series The Hitachi 511664/511664L are CMOS dynamic RAM organized as 65,536-word x 16-bit. 511664/ 511664L have realized higher density, higher perform­

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

smd ND

Abstract: TH101
Contextual Info: Globespan HDSL recommendations DigitalTelecom Features EP13 - SMD • Compatible with Globespan chip sets • Good total harmonic distortion characteristics • Optimized design for size and performance • Customization available • Volume production and automated

HM511665ZP-8

Contextual Info: 511665 Series Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511665JP Series The Hitachi 511665 are C M O S dynamic RA M orga­ nized as 65,536-word x 16-bit. 511665 have realized higher density, higher performance and various functions by

hitachi ras 202 ci

Abstract: HM511665ZP-8 HM511665JP-8 hm511665jp8
Contextual Info: 511665 Series Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511665JP Series The Hitachi 511665 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. 511665 have realized higher density, higher performance and various functions by

FSP 30

Contextual Info: 511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION 511666JP Series The Hitachi 511666 are CMOS dynamic RAM orga­ nized as 65,536-word x 16-bit. 511666 have realized higher density, higher performance and various functions by