5101 CMOS RAM Search Results

5101 RAM

Abstract: M5101-4 M5101 ram 5101 M5101L-4 5101 intel
Contextual Info: intei M 5101-4, M 5101L-4 2 5 6 x 4 BIT S TA TIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output Th e In te l M 5101 is an u ltra -lo w p o w e r 2 5 6 X 4 CM OS R A M sp ecifie d over th e - 5 5 ° C to + 1 2 5 ° C te m p e ra tu re range. Th e R A M

5101 RAM

Abstract: static 5101 M5101 M5101-4 M5101L-4 5101 cmos ram
Contextual Info: in te i M 5101-4, M 5101L-4 256 X 4 BIT S TA TIC CMOS RAM • M ilitary Temperature Range: -55° C to +125° C Single + 5 V Power Supply ■ Ultra Low Standby Current: 200nA /B it C E 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

HM435101

Abstract: JVC DR -E2LBK s5101* ami HM43 ram 5101 MCM5101 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: M O TO R O LA 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f CM O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-volt supp ly. The C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101 sram

Abstract: HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 MCM5101-65
Contextual Info: MOTOROLA MCM5101 MCM51LOI 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f C M O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-v o lt supp ly. T he C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101ab

Abstract: ic 5101 ram 5101 cmos ram L21S
Contextual Info: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M

5101 RAM

Abstract: Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE
Contextual Info: irrte1 « In te l C o rp o ra tio n 1975 APPLICATION NOTE AP-12 Contents Designing Non-Volatile Memory Systems with Inters 5101 RAM IN T R O D U C T IO N . 1 D E V IC E D E S C R IP T IO N .

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

ic 5101 ram

Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x

5101 RAM

Abstract: ram 5101 intel 5101 intel 2101 5101L ram 5101L-1 intel 2101 Static RAM 5101L-3 5101 intel 5101L
Contextual Info: intei 5101 FAMILY ^ 256 x 4 BIT STATIQX M O S jR A M P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) Max Access (ns) 0.14 0.2 0.2 1.0 650 450 650 5101L 5101L-1 5101L-3 0.14 0.70 •Single +5V Power Supply ■ Ideal for Battery Operation (5101L) ■ Directly TTL Compatible:

ATIC 164 D2 44 pin

Contextual Info: Target KMMR16R48C/KMMR18R48C 64/72MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.

LH5101

Abstract: LH5101-30 intel 5101 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:

Contextual Info: In t e l M5101-4, M5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4R256CKE6B Direct Rambus DRAM RIMM™ Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general purpose high-performance memory module subsystem suitable for

ATIC 164 D2 44 pin

Contextual Info: Target KMMR16R4GC/KMMR18R4GC 128/144MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.

Contextual Info: Target KMMR16R4GC/KMMR18R4GC 128/144MB RAMBUS INTERFACE MEMORY MODULE GENERAL DESCRIPTION FEATURES The Direct Ram bus RIM M ™ module is general purpose high-per- • Perform ance range form ance memory subsystem suitable for use in a broad range of Part No.

HM435101

Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

5101-4

Abstract: 2101 256x4
Contextual Info: g g g # 8 8 3 /5 1 0 1 -4 256x4 Static CMOS RAM s c ie n tific Features Pin Configuration • Military Temperature Range: - 5 5 ° C t o + 125°C A3 I 1' ■ Low Power Replacement for 2101 NMOS RAMs a ■ Data retention to 2.0V ■ TrueTTL C om patibility

LH5101-45

Abstract: PCD5101 LH5101S M5L5101LP-1 rca cdp1822 HM435101P HM435101P-1 LH5101L3 lh5101 5101L
Contextual Info: - IK St iâKIcS £ tfc ÍT CC> x TAAC max ns TCAC max (ns) TOE max (ns) 'i 7 TOH •in (ns) CMOS f y TOD max (ns) / S t a t i c If RAM ( 2 5 6 x 4 ) m 1i TWP min (ns) TDS min (ns) TDH min (ns) TWD rain (ns) TWR max (ns) V D D or V C C (V) 22PI N m I DD lax

saa6000

Abstract: 65536 page mode dynamic ITT4164 ITT5101S
Contextual Info: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched

Contextual Info: AT29C4096 Features • • • • • • • • • • Note: See AT49F4096 For New Designs Fast Read Access Time - 90 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches

Contextual Info: MITSUBISHI LSIs Preliminary S peeD Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct R am bus R IM M ™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct

LSC 4350

Contextual Info: ADVANCE 32, 48, 64,128 MEG x 16/18 RAMBUS RIMM MODULES MT4VR3216A, MT4VR3218A, MT6VR4816A, MT6VR4818A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A RAMBUS RIMM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www. micron, convm ti/msp/htivl/datasheet. html

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx 18x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where