50VT Search Results

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

MOTOROLA circuit for mrf150

Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

siemens dioden

Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
Contextual Info: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .

Contextual Info: REV. ECN.NO. A ES.D0S04.012 MODIFY.CONTENT DATE 2008/4/1 25.81 12.30 11.05 9.75 8.05 12.30 9.38 6.88 1.25'33 12 1.05 9.75 8.05 1 2 5 '4 = 5 .0 0 1 .2 5 *3 = 5 .1 5 9.38 6.88 3.12 0.63 1 2 5 * 4 = 5 .0 0 0.80 _ Ground 26 60 10100565 * 01.50 11.65 _g g 21.00

of mosfet BUZ 384

Abstract: BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR
Contextual Info: Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 50 V . 1000 V und 10 mΩ . 8 Ω Power transistors in the 50 V to 1000 V and 10 mΩ to 8 Ω range

smd-transistor DATA BOOK

Abstract: triac ansteuerung smd-transistor SMD transistors Relais datenblatt RGS 13 simple circuit diagram of electronic choke SITAC P-Channel Depletion Mode Field Effect Transistor SMD transistor Mo Siemens varistor family
Contextual Info: Technische Angaben Technical Information SIPMOS Kleinsignal-Bauelemente SIPMOS Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

datenbuch

Abstract: DATA SHEET OF IGBT FREDFET leistungstransistoren datenbuch transistor
Contextual Info: Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters 1 Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen Symbols, Terms, Standards Symbols and Terms of Magnitudes Used Symbole Symbols Begriffe Terms A Anode Anode

2SK1433

Abstract: LFL80
Contextual Info: O rd erin g n u m b e r :E N 3 5 7 Í 2SK1433 No.3571 N-Channel MOS Silicon FET SA \YO Very High-Speed Switching Applications 1 F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M aximum Ratings at T a= 25°C Drain to Source Voltage

Contextual Info: f]jg g 7 m in ia t u r e a l u m in u m e l e c t r o l y t ic c a p a c it o r s . | » C o a tin g ca se co ve re d p rod u cts a re a ls o a va ila b le | •D o w n s iz e d fro m c u rre n t s ta n d a rd S R E s e rie s • 5 m m h e ig h t, 1 00 0 -h o u r-life a t 8 5 t

41F hall

Abstract: liycy 8 AMET-15 Hall 41f A-W-K 40UNC LIYCY connector 1,0 mm
Contextual Info: D-Subminiature D-Subminiature connector Accessories I Locking screw Metal Plastic Bracket Plastic Metal 1 96 r~ \ I sS —<63.80“ I —p T Ì J l~ s t —Iæ4— ^ i I, il y i* UNC 4-40 jk i 5Í .I , } I I Y i ~f 12J I " ' Na al Dimensions (mm / inch)

Contextual Info: Resistors Ultra Precision Networks Make Possible Ultra Precision Networks Ultra UltraPrecision Precision Series Networks Ultra Precision Series Ultra Precision Networks Ultra Precision Networks • Custom schematics and values available • Ultra-stable, high

" transistor" fgs 3

Contextual Info: SIEMENS Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters 4 Diagramme 4 Diagrams 4.1 Verlustleistung 4.1 Power Dissipation Pto, = f{T Angegeben ist die maximal zulässige Ver­ lustleistung, abhängig von der Gehäuse­ temperatur Tc bzw. Umgebungstempera­

materials T495

Abstract: kemetcapacitors
Contextual Info: Low ESR MnO2 Tantalum Surface Mount Capacitors T495 Surge Robust Low ESR MnO2 Series Overview The low ESR, surge-robust T495 Series is designed for demanding applications that require high surge current and high ripple current capability. This series builds upon the proven

Paccom Electronics resistor

Abstract: resistor "color code" 185ra paccom capacitor, ES series polypropylene film foil axial capacitor 63Vdc
Contextual Info: Contents and Product Selection Guide Caramic Capacito«* Series MT ML Type Chip Chip D esc n p tto n General Purpose Fe a tu re Multilayer Monolithic O p e ra tin g C ap ac itan c e Te m p erture Page V o lta g e Ra n g e Tem p erature R a n g e Tolera nce R a n g e

qaf 212

Abstract: WFA225K
Contextual Info: T H I R DA N G L EP R O J E C T I O N I ALTERATION I SS U E ITEM CODE ECWF2Wl04JAB 1 2W124JAB 1 1 2W154JAB 1 2W184JAB 1 2W224JAB 1 2W274JAB H 2W334JAB 1 2W394JAB 1 1 2W474JAB 1 2W564JAB 1 1 2W684JAB 1 2W824JAB 1 2Wl05JAB H 2W125JAB 2W155JAB 1 2W185JAB 1 2W225JAB

CAP TAN 47MF 16V 10 TYPE D

Contextual Info: fS g J SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS •E n d u ra n c e : 105°C 2000 hours •S o lv e n t-p ro o f type, see page 16 ♦SPECIFICATIONS Item s Category Temperature flange Rated Voltage Range Capacitance Tolerance Leakage Current Dissipation Factor

Contextual Info: Resistor Technology NPO HIGH TEMPERATURE APPLICATIONS D03 Type The NPO chips ,D03 type are designed for working in severe environment such as high temperature applications! 2005C . Ail components are tested at 2Un -168 hrs -125’ C Temperature coefficient up o 200’ C : 0 +/- 30 ppm

FR151G

Abstract: FR152G FR153G FR157G
Contextual Info: FR151G thru FR157G 1.5 Amps. Glass Passivated Fast Recovery Rectifiers Voltage Range 5 0 to 1 0 0 0 Volts Forward Current 1.5 Amperes 5YM5EMI s e m ic o n d u c t o r Features ♦ ♦ ♦ ♦ Lo w fo rw a rd v o lta g e d ro p H igh c u rre n t c a p a b ility

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

Contextual Info: • Carry Lookahead Generator Description Pin A ssignm ent The HD74AC182/HD74ACT182 is a high-speed carry lookahead generator. It u generally used with the HD74AC181 or HD74AC381 4-bit arithmetic logic unit to provide high-speed lookahead over word lengths of more than four bits.

Contextual Info: <8 > MOTOROLA M C33272A M C33274A Single Supply, High Slew R ate Low Input O ffset Voltage, Bipolar O perational Am plifiers The MC33272/74 series of m onolithic operational am plifiers are quality fabricated with innovative Bipolar design concepts. This dual and quad

54B4

Abstract: ALC286 BA41-00814A 218S6ECLA21FG BA41-00812A 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS

SDT06S60

Abstract: SPP11N60C3 A66762-A4013-A58 Datenbuch transistor book SIL00036 Transistor Datenbuch datenbuch dioden halbleiter datenbuch Explanation of Parameters Infineon 2002
Contextual Info: Explanation, V1.0, Apr. 2002 Explanation of Data Sheet Parameters Power Management & Supply N e v e r s t o p t h i n k i n g . Erläuterung der Datenblattwerte Explanation of Data Sheet Parameters Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision