50H8016 Search Results

IBM0118180P1M

Abstract: IBM0118180M
Contextual Info: IBM0118180M 1M x 1810/10, 5.0V, LP, SR. IBM0118180P1M x 1810/10, 3.3V, LP, SR. IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications

circuit 4466

Abstract: 4466 IBM0118180M IBM0118180P1M
Contextual Info: IBM0118180M 1M x 1810/10, 5.0V, LP, SR. IBM0118180P1M x 1810/10, 3.3V, LP, SR. IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications

Contextual Info: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance: • System Performance Benefits:

Contextual Info: IBM11T2640H 2M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses - Reduced noise 18 Vss/18Vcc pins - Byte write, byte read accesses - Serial PDs • Performance: -60 -70 60ns 70ns

Contextual Info: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized tor byte-write non-parity applications • Pertormance: -60 ! -70 I rac RAS Access Tim e ; 60ns 70ns