50A 30V 8.5M MOSFET Search Results

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

mdd1653

Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Contextual Info: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

AP-08

Abstract: AP0803GMT-A-HF 50a 30v 8.5m MOSFET
Contextual Info: AP0803GMT-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 50A S D Description

A102

Abstract: APM3007N APM3007NU STD-020C
Contextual Info: APM3007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =5.5mΩ (typ.) @ VGS=10V RDS(ON)=8.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

TSM35N03

Abstract: TSM35N03CP 50a 30v 8.5m MOSFET
Contextual Info: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features — — — High Density Cell Design for Ultra Low On-Resistance —

0803GMT

Contextual Info: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 30V RDS ON SO-8 Compatible Low On-resistance ID G RoHS Compliant 8.5m 50A S D Description D D D Advanced Power MOSFETs from APEC provide the

0803GMT

Abstract: AP0803GMT-HF 12-HK
Contextual Info: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant BVDSS 50A S D Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant BVDSS 50A S D Description Advanced Power MOSFETs from APEC provide the

0803GMT

Abstract: AP0803
Contextual Info: Advanced Power Electronics Corp. AP0803GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS SO-8 Compatible with Heatsink 30V R DS ON Low On-resistance G 8.5mΩ ID RoHS-compliant, halogen-free 50A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with

FDD8447L

Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description „ Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,