TSM35N03 Search Results

TSM35N03 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TSM35N03		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET	Original	PDF	131.99KB	3
TSM35N03CP		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET	Original	PDF	131.99KB	3

TSM35N03 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram	Original	TSM35N03PQ56 TSM35N03PQ56 PDFN56	PDF
Contextual Info: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 35A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Features    High Density Cell Design for Ultra Low On-Resistance 	Original	TSM35N03 TSM35N03CP O-252 300uS, O-252	PDF
TSM35N03PQ56 Contextual Info: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram	Original	TSM35N03PQ56 TSM35N03PQ56 PDFN56	PDF
Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM35N03 O-252 TSM35N03CP	PDF
SOT-252 Abstract: TO-252 MOSFET marking A07 "N-Channel MOSFET" 100V single n-channel n-channel mosfet transistor power 1A 25V MOSFET SOT-252 20v 18BSC TSM35N03 Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM35N03 O-252 TSM35N03CP SOT-252 TO-252 MOSFET marking A07 "N-Channel MOSFET" 100V single n-channel n-channel mosfet transistor power 1A 25V MOSFET SOT-252 20v 18BSC TSM35N03	PDF
SOT-252 Abstract: TSM35N03CP 18BSC TSM35N03 Contextual Info: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 13 @ VGS = 10V 30 8.5 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM35N03 O-252 TSM35N03CP SOT-252 18BSC TSM35N03	PDF
TSM35N03 Abstract: TSM35N03CP 50a 30v 8.5m MOSFET Contextual Info: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features High Density Cell Design for Ultra Low On-Resistance	Original	TSM35N03 TSM35N03CP O-252 300uS, O-252 TSM35N03 TSM35N03CP 50a 30v 8.5m MOSFET	PDF