50701 Search Results

jack 3.5

Abstract: 3.5 mono plug 30713 30705
Contextual Info: F CONNECTORS 2771 SERIES. PLUG - JACK RIGHT ANGLE 2771 - 50701 75Ω F PLUG - BNC JACK 2771 - 30702 (75Ω) F PLUG - RCA JACK 2771 - 50703 (75Ω) JACK - JACK - JACK "TEE" 2771 - 50704 (75Ω) F PLUG - N JACK 2771 - 30705 (75Ω) F PLUG - UHF JACK 2771 - 30706 (75Ω)

M57796H

Contextual Info: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B

M67748L

Abstract: 135-150MHz M67748 mitsubishi rf power module M67748L 3CL10
Contextual Info: MITSUBISHI RF POWER MODULE M67748L 135-150MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : P in RF INPUT ©VCCI 1st. DC SUPPLY VBB BASE BIAS SUPPLY © VC C 2 2nd. DC SUPPLY D Po RF O U TPU T ©GND FIN H27 ABSOLUTE MAXIMUM RATINGS (Tc = 2 5 9C unless otherwise noted

B57861S0103F040

Abstract: EPCOS b57861 25727 15521 101490 B57861S0103H040 B57861 5103 5638-10 B57861S0103J040 B57861S0502 040
Contextual Info: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57861 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

RM400HV-34S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM400HV-34S HIGH SPEED SWITCHING USE INSULATED TYPE RM400HV-34S • IDC • VRRM DC current . 400A Repetitive peak reverse voltage . 1700V • trr Reverse recovery time . 0.5µs

mj15052

Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
Contextual Info: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of

Index of Products and Part Numbers

Abstract: index Radiall BACC65 Connector BACC65 Radiall arinc connector Backshell Radial arinc 600 617 610 Radiall 617610100 EPXB MIL-C-81659
Contextual Info: Index Index of Products and Part Numbers Page 1 of 4 Product Selection Standard Materials and

digital graphic equalizer ic

Abstract: idt tcam Broadcom WLAN 4 pin loco crystal oscillator HDTV sync generator DDR3 rDIMM Broadcom TCAM lvds MUX/DEMUX SE 135 ddr2 ram
Contextual Info: Quick Reference Guide Table of Contents Page URL Clock Generator/Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

in-process quality inspections

Abstract: mitsubishi metal oxide varistor 011AT phase controlled thyristers MITSUBISHI GATE TURN-OFF THYRISTOR gto thyristor handbook design GTO switching test mitsubishi conclusion of zener diode voltage report 4000BX-90DA zener diode reliability fit
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS SEMICONDUCTOR DEVICE RELIABILITY 2. Basic Concepts of Semiconductor Device Reliability The failure rate of devices used in an average piece of equipment can be expressed by using the bathtub curve shown in Fig. 1, line a . Taken

FDS3500

Abstract: FZIT
Contextual Info: m ìa $ < t - k x $ 7 ? > FDS3500HW > U - X w , « ü ' -í ]'" 7s 9 ;/ * F D S 3 5 0 0 H W x U - .7" f i , >P-ív.?fSi3500A« y -í * - K £ • e t c JE ^Í w m n L^ t Kí í í ? ? y -v ^ iBKS UiSi^SJEEíilOOV, 1 r - A ^ ¡i im |¿ M ,4', Jj1g'2ftl¿3200A HlW

Contextual Info: DSA30C200PB preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 2x VF = 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220

Contextual Info: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current. 150A Repetitive peak reverse voltage 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized

ic 437

Abstract: RM500D
Contextual Info: M ITSU BISH I DIODE M O DU LES R M 5 0 0 D Z / U Z - M , - H , - 2 4 ,-2 H ¡ HIGH POWER GENERAL U SE { IN S U L A T E D T Y PE f APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment

Motor Controllers

Contextual Info: MITSUBISHI DIODE MODULES RM 10ODZ/CZ-24,-2H | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM 100DZ/CZ-24,-2H Average forward current.100A Repetitive peak reverse voltage • lF AV • V rrm 1200/16Q0V • DOUBLE ARMS • insulated Type

200PB

Contextual Info: DSA 30 C 200 PB advanced V RRM = 200 V I FAV = 2x 15 A V F = 0.78 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

utc 2030

Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES  3 * Collector-Emitter Voltage: VCEO= -80V * Collector Dissipation: PD=350mW 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Ordering Number Note:  MMBTA56G-AE3-R

2sa1363

Abstract: mitsubishi 2SA1363
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1363 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1363 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING Uni,:mm collector current and high collector dissipation.

marking mitsubishi

Abstract: oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1948 FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1948 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unit mm designed with high voltage, high hFe and high fr.

transistor eb 2030

Abstract: transistor 2030 2SC5209 oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.

Contextual Info: MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H It av Average on-state current 400A V rrm Repetitive peak reverse voltage 400/800/1200/1600V V d rm Repetitive peak off-state voltage

Contextual Info: MITSUBISHI RF POWER MODULE 1,24^02=] DD17415 flbfl • _ M67749L 400-430MHZ, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © PIN : 5 Pm : RF INPUT @VCCl : 1nd. DC SUPPLY VBB : BASE BIAS SUPPLY @ V C C 2 : 2nd. DC SUPPLY

Contextual Info: M an A M P company Two-Way Power Divider 10-1000 MHz T-1000 V2.00 C-7 Features • B ro a d b a n d F re q u e n c y R ange • • Isolation - 25 dB Min Insertion Loss —0.8 dB Max ir CONNECTOR 3 PLACES 750 ±0.020 e Guaranteed Specifications’1 0.672 17.1