502E Search Results

2n6059 equivalent

Abstract: 2N6059 JANTX equivalent 2N6058 2N6059 C-2688
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 December 2008. MIL-PRF-19500/502E 4 September 2008 SUPERSEDING MIL-PRF-19500/502D 12 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,

Honeywell CZ-502E

Abstract: a1023 CZ-502E honeywell cz 502e automatic room heater 2000W AUTOMATIC ROOM LIGHT 81F64842B honeywell hall 0x39
Contextual Info: Honeywell FAN HEATERS CZ-502E Fan Heater W ith tu rb o -h ig h -p e rfo rm a n c e e n g in e . T h e larg e w in d -tu n n e l p ro v id e s a re g u la r a n d q u ic k h c a tin c o f a ro o m . Ver ' so lid c o n s tru c tio n w ith a n all ste e l b o d y

Contextual Info: MEMORY 2 M x 32 BITS HYPER PAGE M DDE DRAM MODULE 502EOSI2AA-6Gf-70 1 1 1 1 1 1 M B I •V 1 m m r V r %r mm m ot \ ê r mm - - V f 1 V 2M x 32 BITS Hyper Page Mode DRAM Module, 5 V, 2-Bank ■ DESCRIPTION The Fujitsu 502E032AA is a fully decoded, CMOS dynamic random access memory (DRAM module

A-502H-10

Abstract: C-502E-10 C-502G-10 C-502H-10 C-502SR-10 C-502Y-10 C-522E C-522G C-522H C-522Y
Contextual Info: C/A-502X-10, C/A-522X DUAL DIGITS DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp nm Electro-Optical Characteristics Vf(V)20mA Iv(ucd)10mA Typ. Max. Typ. C-502H-10 C-502E-10 C-502G-10 C-502Y-10 A-502H-10

3 PIN hall effect 506k

Abstract: an 503 sensor hall HAL 506K an 503 hall sensor 506A Magnetic Sensors forklift Hall Effect Sensor Family 503K hall effect 506k TRANSISTOR MT SMD 506K
Contextual Info: MICRONAS INTERMETALL HAL501.506, 508, 509, HAL516.518 Hall Effect Sensor Family MICRONAS Edition Feb. April 4, 16,1996 1999 6251-365-1DS 6251-485-1DS HAL5xx Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features

153j capacitor

Abstract: Aerovox energy discharge Aero m capacitor aerovox capacitor oval Type p BS AEROVOX Aerovox energy discharge capacitor
Contextual Info: Pulse Capacitors for Flash Lamp Applications Technology for the New Millennium Aerovox's Type Z and Type Y m e ta llize d e le ctro d e e n e rg y discharge pulse capacitors provide a highly reliable cost-effective source of energy storage for a variety of

Contextual Info: Precision Single, Dual and Quad Low Noise Operational Amplifiers ISL28107, ISL28207, ISL28407 Features The ISL28107, ISL28207 and ISL28407 are single, dual and quad amplifiers featuring low noise, low input bias current, and low offset and temperature drift. This makes them the

STM8L051F3

Abstract: STM32L15x STM8L051 IR 519A STM8L i2c STM8L CPU programming manual bj 950 131- 6 023-465 STM32L STM8L I2C Example
Contextual Info: STM8L051F3 Value Line, 8-bit ultralow power MCU, 8-KB Flash, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC Datasheet  production data Features • Operating conditions – Operating power supply: 1.8 V to 3.6 V Temperature range: 40 °C to 85 °C

Contextual Info: STM8L151x8 STM8L152x8 STM8L151R6 STM8L152R6 8-bit ultralow power MCU, up to 64 KB Flash + 2 KB data EEPROM, RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators Datasheet − production data Features • ■ Operating conditions – Operating power supply: 1.65 to 3.6 V

ASSR-3220

Abstract: ASSR-3211-501E 5v 10mA reed relay 780 AC ASSR-3210 ASSR-3211 relay diagram 8 Position 16 Pin SPST dip switch REED RELAY FORM A 5V DIP 8PIN AV02-02
Contextual Info: ASSR-3210, ASSR-3211, ASSR-3220 General Purpose, Form A, Solid State Relay Photo MOSFET (250V/0.2A/10Ω) Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ASSR-32XX Series consists of an AlGaAs infrared

thermistor ptc 103

Abstract: Transistor iaw 91
Contextual Info: MCP40D17/18/19 7-Bit Single I2C with Command Code Digital POT with Volatile Memory in SC70 Package Types Features • Potentiometer or Rheostat configuration options • 7-bit: Resistor Network Resolution - 127 Resistors (128 Steps) • Zero Scale to Full Scale Wiper operation

DIODE 709 1334

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

3224W-1-502E

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

Contextual Info: MCP41HVX1 7/8-Bit Single, +36V ±18V Digital POT with SPI Serial Interface and Volatile Memory  2013 Microchip Technology Inc. MCP41HVX1 Single Potentiometer TSSOP (ST) VL SCK CS SDI SDO WLAT SHDN 14 13 12 11 10 9 8 1 2 3 4 5 6 7 V+ P0A P0W P0B VDGND

Contextual Info: SiP12502 Vishay Siliconix 500 mA - Fixed Output Boost Converter for Single or Dual Cell DESCRIPTION FEATURES SiP12502 is a boost converter IC with fixed output voltage for single or double cell NiMH or Alkaline battery pack. Featuring with an internal low resistance power MOSFET, it is capable

ISL28227FRTZ

Abstract: ISL28127 ISL28127FBZ ISL28127FRTZ ISL28127FUZ ISL28227 ISL28227FBZ ISL28227FUZ RC900
Contextual Info: ISL28127, ISL28227 Features The ISL28127 and ISL28227 are very high precision amplifiers featuring very low noise, low offset voltage, low input bias current and low temperature drift making them the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of

MCP413X

Abstract: MCP41x1 wiper speed controller applications MCP41x2 MCP414X sck 103 thermistor 4131502E 423X MCP4011 application rheostat hi power
Contextual Info: MCP413X/415X/423X/425X 7/8-Bit Single/Dual SPI Digital POT with Volatile Memory Features Description • Single or Dual Resistor Network options • Potentiometer or Rheostat configuration options • Resistor Network Resolution - 7-bit: 128 Resistors 129 Steps

SiP12502

Abstract: MBR0520 MLP33-6
Contextual Info: SiP12502 New Product Vishay Siliconix 500 mA – Fixed Output Boost Converter for Single or Dual Cell FEATURES D Voltage Mode Control with Internal Frequency Compensation D 0.85 V to 5.0 V Input Voltage Range D Fixed Output Voltage Options –– 2.0 V, 3.3 V, and 5.0 V

mm14528

Abstract: 4528 951 Monostable 4528BF 7704501ex 951 Monostable Multivibrator IC 4528 4528B 7704501 SPRAGUE SEMICONDUCTOR
Contextual Info: 1 REVISIO N S DATE D E S C R IP T IO N LT R Add d e v ic e typ e 02 to draw ing. Add vendor CAGE 27014 to d e v ice type 02 ca se o u t lin e E . C onvert to m i l i t a r y draw ing form at. Changes to ta b le I. E d i t o r i a l changes th rou gh o ut.

SiP12502

Contextual Info: Product is End of Life 3/2014 SiP12502 Vishay Siliconix 500 mA - Fixed Output Boost Converter for Single or Dual Cell DESCRIPTION FEATURES SiP12502 is a boost converter IC with fixed output voltage for single or double cell NiMH or Alkaline battery pack. Featuring

ASSR-V622-002E

Contextual Info: ASSR-V621 and ASSR-V622 Dual Channel Photovoltaic MOSFET Driver 6.5V/15 A Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ASSR-V62X Series is specially designed to drive

ASSR-1510

Abstract: ASSR-1511
Contextual Info: ASSR-1510, ASSR-1511, ASSR-1520 High Current, Solid State Relay 60V/1.0A/0.5Ω Data Sheet Description Features The ASSR-15XX Series is specifically designed for high current applications, commonly found in the industrial applications. • Compact Solid-State Bi-directional Signal Switch

ASSR-1510-003E

Abstract: ASSR-15XX ASSR-1511 ASSR-1510
Contextual Info: ASSR-1510, ASSR-1511, ASSR-1520 High Current, Solid State Relay 60V/1.0A/0.5Ω Data Sheet Description Features The ASSR-15XX Series is specifically designed for high current applications, commonly found in the industrial applications. • Compact Solid-State Bi-directional Signal Switch

IRL 724 N

Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or