501MHZ Search Results

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

Contextual Info: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •

Contextual Info: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)

Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

mt3s113p

Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking

Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)

25c1815

Abstract: TGC1411 TGC1411-EPU DOUBLE FET
Contextual Info: Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA

Contextual Info: MT3S113 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11.8dB(標準) (@ f=1GHz)

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking

MT3S113TU

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)

mmic core chip

Abstract: TGC1452-EPU 10GHz mixer
Contextual Info: Advance Product Information January 3, 2001 0.2 - 18 GHz Downconverter TGC1452-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.2-18 GHz RF/LO Frequency Range DC-4 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 17-24 mA

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking

Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking

MT3S111P

Contextual Info: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 576.0MHz Part No: MP04545 Model: TA1355A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 10dBm

Frequency Generator 500MHz

Abstract: LT5522
Contextual Info: DC651A DEMO BOARD QUICK START GUIDE Description: The DC651A demo circuit board is intended to demonstrate the capabilities of the LT5522 highsignal-level downconverting mixer IC for cable and CATV infrastructure applications. The LT5522 Figure 1 is a broadband high signal level active mixer optimized for high linearity

vga splitter amplifier schematic

Abstract: schematic for vga splitter vga splitter schematic VGA Splitter block diagram transistor J1x AD8348-EVAL gilbert cell differential pair operational amplifier discrete schematic vga input schematic AD8348
Contextual Info: PRELIMINARY TECHNICAL DATA a 50–1000 MHz Quadrature Demodulator Preliminary Technical Data AD8348 Features Integrated I/Q demodulator with IF VGA Amplifier Operating IF Frequency 50–1000 MHz 3dB IF BW of 500MHz driven from Rs=200ohms Demodulation Bandwidth 60MHz

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)

PSA2701T

Abstract: Twin 3.5mm mono jack plugs fm radio 3.5mm jack circuit diagram of bluetooth fm transmitter battery operated speaker diagram for mp3 audio am bluetooth advantages and disadvantages weigh scale calibration program circuit diagram of bluetooth headphone labview audio spectrum analyser Thurlby
Contextual Info: THURLBY THANDAR INSTRUMENTS PSA-T Series PSA1301T & PSA2701T Portable 1.3GHz and 2.7GHz RF Spectrum Analyzers Big on performance Small on size and cost PSA-T series RF Spectrum Analyzers Big on performance Small on size and cost The PSA-T series is an entirely new type of instrument.

Contextual Info: TOSHIBA 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 FM TUNER, VHF RF AM PLIFIER APPLICATIONS. U n it in mm 2.1 ± 0.1 • Low Reverse Transfer Capacitance : C rss = 0.025pF Typ. • Low Noise Fig u re : N F = 1.7dB (Typ.) •

mt3s111

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking

Contextual Info: MT3S113P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)

Contextual Info: MT3S111TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 2. エミッタ 3. コレクタ UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準