500MIN Search Results

Contextual Info: Capacitors Ceramic Trimmer Capacitors o TZS2 Series 2.7 1.0max. 2.2 1.0 0.6 0.20 Depth 0.4 Tolerance:±0.1 in mm Part Number Cmin. pF Cmax. (pF) TC Q Rated Voltage Withstanding Voltage TZS2Z060A001 3.0 max. 6.0 +100/-0% NP0±300ppm/°C 500min. at 1MHz, Cmax.

Contextual Info: .335 SQ. MAX .280 MAX 1 1 .500MIN. J_ .014 *.003 .017 DIA 9 PINS DCO 140933 CUSTOMER DATA SHEET COIL: @ 25°C 1560 OHMS ± 10% RESISTANCE NOMINAL VOLTAGE _ 26.0 VDC MUST OPERATE _ 14.2 VDC MUST RELEASE 8.0 VDC MAX. 1.37 VDC MIN. ENVIRONMENT: VIBRATION

2SC3852A

Abstract: 2sc3852 FM20 transistor 2sc3852
Contextual Info: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A

2SC3831

Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

transistor 2sc3852

Contextual Info: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC

2SC3852

Contextual Info: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V)

2SC4907

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 Unit 1max mA VEB=10V 100max µA IC=25mA 500min V VCB=600V IB 2 A VCE(sat) IC=2A, IB=0.4A

2SC4495

Abstract: FM20
Contextual Info: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz

LF400A

Abstract: STA335A 10T25 IC 122
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A

vbe 12v, vce 600v NPN Transistor

Abstract: 2SC3831
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

vbe 12v, vce 600v NPN Transistor

Contextual Info: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC

Contextual Info: .3 3 5 5 0 . MAX .280 MAX 1 500MIN. .014 *.003 _L_ 017 COIL: S 25°C CUSTOMER DATA SHEET 390 OHMS i 10% RESISTANCE 12.0 VDC NOMINAL VOLTAGE O n 4.0 VDC MAX. 0.63 VDC MIN. % cT ENVIRONMENT: VIBRATION_ SHOCK _ 11. TEMPERATURE _ NOTES: - Q g r-O 7 0 VDC

2SC4495

Abstract: FM20
Contextual Info: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz

PT 1132

Abstract: LF400A STA335A
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A

2SC3852A

Abstract: 2sc3852 FM20 3852-A DSA0016508
Contextual Info: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ

GRM55DR72J224KW01L

Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
Contextual Info: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05

HPA-E61

Abstract: HPA-T63 HPA-P61 HPA-R61 Transistor E11 HPA-R63 HPA-A61 HPA-D61 HPA-E63 HPA-T61
Contextual Info: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 6 3 H P A -E 63 H P A -R 63 H P A -P 63 HPA-T61 HPA-E61 HPA-R61 HPA-P61 DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ LIGHT SOURCE : RED LIGHT SOURCE : INFRARED

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

STK 407 - 040

Abstract: stk 407 070 LP 8029 m4 stk 407 090 LM 7804 STK 407 040 LM 7801 LP 8029 l2 9SMnPb28k makrolon 8030
Contextual Info: Miniatur-Abstandhalter Miniatur-Abstandhalter LPR 8000-Mini ff LPR 8001-70-Mini ff Miniature PCB Spacer r Selbstverriegelung wiederlösbar durch Zurückdrücken der Nase. Self-locking and releasable. r Montage: / Mounting: Bohrungen von 3,2 mm; max. 1,6 mm Materialstärke.

215DB

Abstract: CF6119101
Contextual Info: 1/1 001-01 / 20010913 / e7329_cf.fm RF Components CF Series, CF6119101 Dielectric Filters SMD FEATURES • Compact and high performance 3-pole filter. • High relieability(Ceramic block filter). • SMD type. SHAPES AND DIMENSIONS RECOMMENDED PC BOARD AND RESIST PATTERNS

CF6118402

Contextual Info: 1/1 001-01 / 20010913 / e7327_cf.fm RF Components CF Series, CF6118402 Dielectric Filters SMD 1900 TX FEATURES • Compact and high performance 4-pole filter. • High relieability(Ceramic block filter). • SMD type. SHAPES AND DIMENSIONS 3.55 1.425 1.55±0.13

CDMA800

Abstract: CF6115802 CF6116401 CF6117101 CF61A0801 Dielectric Filters
Contextual Info: 1/6 001-02 / 20030825 / e7331_cf.fm RF Components Dielectric Filters SMD CDMA800 These products are high dielectric constant ceramic elements for CDMA800 with a low dielectric loss in microwave frequency band and a temperature coefficient lower than the ppm level. By incorporating these microwave dielectric ceramics, we have been able to miniaturize

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please