500A MOSFET Search Results

Contextual Info: VSX1850 500A Forward/Reverse Separate Excitation DC Motor Controller Roboteq’s VSX1850 is a high-current controller for Separate Excitation DC motors. The controller is composed of a unidirectional half-bridge capable of up to 500A for the motor’s armature, and a 25A bidirectional power bridge for the motor’s

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Contextual Info: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

MMIX1F520N075T2

Abstract: IXFZ520N075T2 ixfz520n075
Contextual Info: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH500N04T2 IXTT500N04T2 = 40V = 500A Ω ≤ 1.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions D D (Tab) S Maximum Ratings

IXTH500N04T2

Abstract: IXTT500N04T2 123B16
Contextual Info: Advance Technical Information IXTH500N04T2 IXTT500N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 500A Ω ≤ 1.6mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40

Contextual Info: BUK464-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)62.5 Minimum Operating Temp (øC)

Contextual Info: BUK444-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)2.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: BUK454-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

IXGQ240N30PB

Abstract: ixgq240n30 GQ240N30PB
Contextual Info: IXGQ240N30PB PolarTM High Speed IGBT VCES = 300V = 500A ICP VCE sat ≤ 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VGES VGEM Continuous Transient ±20 ±30 V V G C E IC25 ICP IC(RMS) TC = 25°C (Chip Capability)

A237

Abstract: AON7446
Contextual Info: AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: AON7446 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: AON7452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

US1235

Abstract: AON7452
Contextual Info: AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AON7452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

N mosfet 100v 500A

Abstract: mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A TK20A60UIAR Mosfet 600V, 20A TK12J60U TK12A60U
Contextual Info: 08cj-H-01 600V系新構造 DTMOS シリーズ 600V Power MOSFETs with New Super Junction structure ◆ 近年家電製品の電源効率の向上や、セットの小型化が要求されており、これらの要求に対して スーパージャンクション構造を適用することで、シリコン固有の臨界電界で決定する理論限界を

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BYC15 DIODE Preliminary RECTIFIER DIODE, HYPERFAST  DESCRIPTION The UTC BYC15 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15 is suitable for half-bridge lighting ballasts,

BYC20G

Abstract: Rectifier Diode 20A Vrrm 500V MOSFET 40A 600V BYC20-600
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC20-600 DIODE RECTIFIER DIODE, HYPERFAST „ DESCRIPTION The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting

BYC8-600

Abstract: BYC8600
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current

Contextual Info: AON3613 30V Complementary MOSFET General Description Product Summary The AON3613 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. N-channel P-channel

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST „ DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current

BYC20G

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BYC20-600 Preliminary DIODE RECT I FI ER DI ODE, H Y PERFAST ̈ DESCRI PT I ON The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting

Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

BYC15-600

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST „ DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,