500A FET Search Results

500A FET Result Highlights (5)

Part	Manufacturer	Description	Download
DEL2V2P500A40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.	PDF
DBL5W5P500A40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.	PDF
DBV5W5P500A40LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Female Screw Lock UNC 4.40, Back: Without Accessory on PCB.	PDF
DAO11W1P500A30LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 11W1 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Threaded Insert UNC 4.40, Back: Without Accessory on PCB.	PDF
DB17W2S500A30LF	Amphenol Communications Solutions	D-Sub Power Board Mount Connectors, Input Output Connectors, Mixed Signal and Power 17W2 Socket Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Without Accessory on PCB.	PDF

500A FET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MTO thyristor Abstract: mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v Contextual Info: SDM170HK2 500A, 4500V 53mm MTOTM Thyristor Features Package 500A, 4500V Voltage Control Turn-Off Capability Low Power Gate Driver A = 75.2mm, B = 48.3mm, D = 27.2mm Symmetrical Blocking Capability Description MTOTM Thyristor is a new hybrid high power bipolar MOS turn-off thyristor. It is	Original	SDM170HK2 Sdm170v2 MTO thyristor mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v	PDF
pir 500b Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	Q020b6Q BUK637-500A BUK637-500B BUK637-500C 31-is* BUK637 bb53T31 0020bfl4 pir 500b	PDF
BUK657-500A Abstract: BUK657-500B BUK657 BUK657-500C T0220AB buk657-500 r gb 489 Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • 0D2071D T ■ PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	fabS3131 D2D71D BUK657-500A BUK657-500B BUK657-500C r-39-J3 BUK657 -500A -500B -500C T0220AB buk657-500 r gb 489	PDF
BUK657 Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	fab53131 D2D71D BUK657-500A BUK657-500B BUK657-500C BUK657 -500A -500B -500C ID/100 BUK657-500C T0220AB	PDF
BUK657-500C Contextual Info: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	bbS3T31 BUK657-500A BUK657-500B BUK657-500C BUK657 -500A 9/76m BUK657-500C	PDF
BUK637-500B Abstract: diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C BUK637 Contextual Info: Philips Components BUK637-500A BUK637-500B BUK637-500C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancem ent mode lield-effect power transistor in a plastic envelope. F R E D F E T with last recovery reverse diode,	OCR Scan	BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C M89-1167/RC BUK637-500B diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C	PDF
BUK637-500B Abstract: BUK637-500A BUK637-500C Contextual Info: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 7 -is GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C BUK637-500C	PDF
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	bb53131 BUK627-500A BUK627-500B BUK627-500C BUK627 si70Id Q020fc	PDF
Contextual Info: N AflER PHILIPS/DISCRETE 25E ]> • bbS3T31 aaaQbTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a	OCR Scan	bbS3T31 BUK655-500A BUK655-500B BUK655-500C BUK655	PDF
GS 069 LF Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C T-39-15 GS 069 LF HCA-120	PDF
500c t2 Abstract: BUK627-500A BUK627-500B BUK627-500C Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D m ^53*131 GD2Gbba PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	bb53131 BUK627-500A BUK627-500B BUK627-500C -r-37- BUK627 -500A -500B -500C 500c t2	PDF
diode t25 4 L0 Abstract: BUK655-500A BUK655-500B BUK655-500C T0220AB BUK655-500 1c7s Contextual Info: 2SE J> N AflER P H IL I P S / I > I S C R E T E bbS 3T31 QD20t.cÎS 7 BUK655-500A BUK655-500B BUK655-500C PowerMOS transistor Fast Recovery Diode FET T - 3 7 - /3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a	OCR Scan	bbS3131 Q020t. BUK655-500A BUK655-500B BUK655-500C BUK655 -500A -500B -500C diode t25 4 L0 T0220AB BUK655-500 1c7s	PDF
BUK655-500A Abstract: BUK655-500B BUK655-500C T0220AB dlp afe 1000 Contextual Info: N AMER P H I L I PS /D IS CR ET E 25E » • bbS3T31 QOEObTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B . BUK655-500C T - 3 7 - /3 g e n e r a l d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a	OCR Scan	bbS3131 a020t. BUK655-500A BUK655-500B BUK655-500C T-37-/3 BUK655 -500A -500B -500C BUK655-500C T0220AB dlp afe 1000	PDF
Contextual Info: Solid State Relays G3RV Slimmest OMRON plug-in SSR with maximum width 6.2 mm • Long electrical life and high speed switching • Large plug-in terminals for reliable connection • G3RV-D DC load models can manage resistive loads of 100 µA to 3.0 A • LED indicator for visible operation checking	Original	J180-E1-02	PDF

Contextual Info: シングル P チャンネル MOSFET ELM13415CA-S •概要 ■特長 ELM13415CA-S は低入力容量低電圧駆動、低・ Vds=-20V ・ Id=-4A Vgs=-4.5V オン抵抗という特性を備えた大電流 MOS FET です。また、保護回路によって ESD 耐性があります。	Original	ELM13415CA-S AO3415	PDF
Contextual Info: シングル N チャンネル MOSFET ELM14354AA-N •概要 ■特長 ELM14354AA-N は低ゲート入力電荷低いゲー・ Vds=30V ト電圧、及び低いオン抵抗という特性を備えた大電流・ Id=23A Vgs=10V MOS FET です。	Original	ELM14354AA-N	PDF
BUK627-500A Abstract: BUK627-500B BUK627-500C Contextual Info: N AMER PHILIPS/DISCRETE SSE D m b b 5 3 c131 GD2Gbba P o w erM O S tra n s isto r Fast R ecovery D iode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly	OCR Scan	bb53131 BUK627-500A BUK627-500B BUK627-500C -r-37- BUK627 -500A -500B -500C -ID/100 BUK627-500A BUK627-500B BUK627-500C	PDF
AO4456 Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AO4456 AO4456	PDF
ao4456 Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,	Original	AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31	PDF
Contextual Info: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in	Original	AO4726 AO4726 00A/us	PDF
ao4712 Contextual Info: AO4712 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AO4712 AO4712	PDF
Contextual Info: AON7702A 30V N-Channel MOSFET 1234566576 General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AON7702A AON7702A	PDF
AO4712 Contextual Info: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AO4712 AO4712	PDF
aon7702 Contextual Info: AON7702 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load	Original	AON7702 AON7702	PDF

500A FET Search Results

500A FET Result Highlights (5)

500A FET Datasheets Context Search

MTO thyristor

pir 500b

BUK657-500A

BUK657

BUK657-500C

BUK637-500B

BUK637-500B

GS 069 LF

500c t2

diode t25 4 L0

BUK655-500A

BUK627-500A

AO4456

ao4456

ao4712

AO4712

aon7702