5000MM2 Search Results

A1177

Abstract: IT13811 EFC4606 TI 7059 marking G2 A11776
Contextual Info: EFC4606 Ordering number : ENA1177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4606 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications

Contextual Info: Ordering number : ENA1123A EFC4618R-P N-Channel Power MOSFET http://onsemi.com 24V, 6A, 23mΩ, Single EFCP Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Protection diode in Halogen free compliance

Contextual Info: Ordering number : ENA2329A EFC6612R Power MOSFET 20V, 5.1mΩ, 23A, Dual N-Channel http://onsemi.com Features • 2.5V drive  Protection diode in  Halogen free compliance  Common-drain type  2KV ESD HBM Applications  Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA1477B EFC4612R N-Channel Power MOSFET http://onsemi.com 24V, 6A, 45mΩ, Single EFCP Features • • • • • 2.5V drive Built-in gate protection resistor Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance

Contextual Info: Ordering number : EN*A2291 EFC6611R Advance Information http://onsemi.com N-Channel Power MOSFET 12V, 27A, 3.2mΩ, Dual EFCP Features • 2.5V drive • Protection diode in • Halogen free compliance • Common-drain type • 2KV ESD HBM Applications • Lithium-ion battery charging and discharging switch

Contextual Info: Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Single EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

a0537

Abstract: EFC4601 32608P marking G2 IT11974
Contextual Info: EFC4601 Ordering number : ENA0537 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications

d1296

Abstract: PA1853
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and

LTC1575

Abstract: LT1210 Design note CCD linear array LTC1433 LTC1434 MBRS130LT3 TPSD107M010R0100 TPSE686M020R0150 74HC74 quadrature dn132
Contextual Info: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products January 1997 Products of the Month Constant Frequency DC/DC Converters Offer High Efficiency at Light Loads The Adaptive PowerTM output stages selectively drive one or both of the switches at

CTX-01-13033-X2

Abstract: CTX-01-13033 LT1210 as buffer LT1210 2n2907a spice MARCON NH capacitor MIDCOM 671-7783 Laptop AC adapter 19V LT1210 Design note pico amp meter
Contextual Info: LINEAR TECHNOLOGY MAY 1996 IN THIS ISSUE . . . COVER ARTICLE LT 1307 Micropower DC/DC Converter Eliminates Electrolytic Capacitors . 1 Steve Pietkiewicz Issue Highlights . 2 LTC in the News . 2 DESIGN FEATURES

1497G

Contextual Info: LT1497 r j u n e TECHNOLOGY Dual 125mA, 50MHz Current Feedback Amplifier F6RTUR6S D€SCRIPTIOfl • Minimum Output Current: ±125mA ■ Maximum Supply Current per Amp: 7mA, V§ = ±5V ■ Bandwidth: 50MHz, VS =±15V ■ Slew Rate: 900V/|is,Vs = ±15V ■ Wide Supply Range: Vs = +2.5V to + 15V

Contextual Info: Ordering number : ENA2179 EFC4619R Power MOSFET 24V, 6A, 23m N-Channel Dual EFCP ht t p://onse m i.c om Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch

Contextual Info: EFC4618R-P Ordering number : ENA1123A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R-P General-Purpose Switching Device Applications Features • • • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type

ECG1078

Abstract: 0003510
Contextual Info: bbS3TSa ODGBTlb h 17E PHILIPS E C G INC ECG1078 j-74-05-01 6.5W AF POWER AMPLIFIER semiconductors FEATURES ; Dcvfc* Mounting Hof« Layout Oim«n»iön* • Output power 6.5 W at T.H.D 10% . • Low distortion. • Self centering bias. • High gain. D ESC R IP T IO N

M-Typ

Abstract: KPA1816 5000mm2
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1816 TSSOP-8 Features Unit: mm 1.8V drive available Low on-state resistance RDS on 1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A) RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A) RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A)

A1123

Contextual Info: EFC4618R-P Ordering number : ENA1123 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R-P General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications

a1262

Abstract: EFC4601R TA72
Contextual Info: EFC4601R Ordering number : ENA1262 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4601R General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications

Contextual Info: EFC4612R Ordering number : ENA1477 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4612R General-Purpose Switching Device Applications Features • • • • 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch.

A1508

Abstract: 62310P EFC4611
Contextual Info: EFC4611 Ordering number : ENA1508 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4611 General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications

A2151

Contextual Info: EFC6601R Ordering number : ENA2151 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance

A1477

Abstract: EFC4612R RG2004
Contextual Info: EFC4612R 注文コード No. N A 1 4 7 7 三洋半導体データシート N EFC4612R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 2.5V 駆動。 ・ ゲート保護用抵抗内蔵。 ・ LiB 充放電スイッチ用途に最適。

A1629

Abstract: EFC4615R EFCP1515-4CC-037 62310P S10ms 2RG3 IT11565 TA7060
Contextual Info: EFC4615R 注文コード No. N A 1 6 2 9 三洋半導体データシート N EFC4615R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 2.5V 駆動 ・ LiB 充放電スイッチ用途に最適

A2151

Abstract: data A2151 EFC6601R-TR Sanyo battery a215-15 ENA2151A EFCP2718-6CE-020
Contextual Info: EFC6601R Ordering number : ENA2151A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6601R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance

D44VH4

Abstract: D45VH4 similar LT1497CS LT1497CS8 LT1207 LT1229 LT1497 D45VH4 671-7807
Contextual Info: LT1497 Dual 125mA, 50MHz Current Feedback Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Minimum Output Current: ±125mA Maximum Supply Current per Amp: 7mA, VS = ±5V Bandwidth: 50MHz, VS = ± 15V Slew Rate: 900V/µs, VS = ±15V