500 WATTS RF POWER AMPLIFIER Search Results

Contextual Info: MPP5002K5200-2 DATA SHEET 2 Way High Power Broadband Combiner SMA Connectors From 500 MHz to 2.5 GHz Rated at 200 Watts MPP5002K5200-2 is a 2 way High Power Broadband RF Combiner with a max input power at 200 watts operating from 500 to 2500 MHz with, 50 ohm SMA

Contextual Info: MPP0801K0500-4 DATA SHEET 4 Way High Power Broadband Combiner N Connectors From 80 MHz to 1,000 MHz Rated at 500 Watts MPP0801K0500-4 is a 4 way High Power Broadband RF Combiner with a max input power at 500 watts operating from 80 to 1000 MHz with 50 ohm N connectors.

HW-02N

Abstract: BNC T connectors INSERTION LOSS Microlab/FXR HW-02N HW-15N QQ-S-365 HW-04N bnc T connector loss Microlab FXR
Contextual Info: MICROLAB/FXR Bias/Monitor Tees HU and HW series ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power, Low Loss 100 – 8,000 MHz 50 Watts Average Power Rating See HW series data for 500 Watts Minimal RF Insertion Loss High Reliability Powering of Antenna Amplifiers N, BNC, TNC, or SMA Standard

acrian RF POWER TRANSISTOR

Abstract: Acrian s 46120 BVces Scans-00115701
Contextual Info: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed

acrian RF POWER TRANSISTOR

Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
Contextual Info: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed

acrian RF POWER TRANSISTOR

Abstract: ACRIAN acrian RF POWER TRANSISTOR 300 w T-33-O acrian inc
Contextual Info: n 18299 8 A C R I A N 97D 0 1229 INC T7 ACRIAN INC D T~— 33- O DE | 0 1 0 2 ^ 0 DGDiaai 3 46110 GENERAL DESCRIPTION 10 WATTS - 28 VOLTS _ 1000 MHz The 46110 is a stable common emitter transistor capable of providing 10 watts of CW RF output power across the 500-1000 MHz frequency

a2733

Contextual Info: 4624 Beam Power Tube FORCED-AIR COOLED UHF GRID-DRIVE OPERATION INTEGRAL RADIATOR 300 WATTS UHF TV OUTPUT AT 890 Me MATRIX-TYPE CATHODE tlO WATTS PEP OUTPUT AT 30 Me DISTRIBUTED AMPLIFIER SERVICE TO 500 Me F o r U s e a s an RF P owe r Ampl i f i e r i n T e l e v i s i o n and S i n g l e S i d e b a n d S u p p r e s s e d - C a r r i e r S e r v i c e and a s a B r o a d b a n d

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

rca tube 53

Abstract: 210 radiotron RADIOTRON T-20 LB1944 rca company r18000 VOLTAGE SUPPRESSOR
Contextual Info: R-F POWER AMPLIFIER PENTODE Filament Voltage Current Transconductance Thoriated Tungsten 10 5 for plate current of 6 2 . 5 m a. a-c or d-c volts amp. . pmnos 4000 Direct Interelectrode Capacitances: Grid t o P la te wi th ext ern al s hi e l d i n g 0 .1 5 max.

RCA tube 76

Abstract: 4606 fet 4604 fet 500 watts amplifier RADIOTRON rca company rca tube 53 rca 30 tube
Contextual Info: R-F POWER AMPLIFIER PENTODE Heater0 Coated Unipotential Cathode a-c or d-c volts Voltage 6.3 amp. Current 0.9 Transconductance for _ p la t e c u r r e n t o f 20ma. ¿ ¿ d \j ymhos Oirect Interelectrode Capacitances: 0.15 max. ppf Grid to Plate W i t h e x t e r n a l s h i e l d i n g

Nippon capacitors

Contextual Info: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.

rca tube 56

Abstract: rca 936 UT-1085 RADIOTRON rca 35 tube GT-56 RCA tube rca company rca tube 32 rca 30 tube
Contextual Info: SCREEN GRID R-F POWER AMPLIFIER Filament Thoriated Tungsten Voltage 11 a-c or d-c vo lts amp. Current 10 A m plification Factor 300 approx. Transconductance for jmhos plate current of130 ma. 2100 D irect Interelectrode Capacitances (approx. ; O.lO’ maximum

TRANSISTOR Z4

Abstract: MRF393 motorola rf Power Transistor transistor z5 "100 6W"
Contextual Info: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

Contextual Info: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

Contextual Info: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

Johanson Piston Trimmer

Abstract: MRF327 erie redcap capacitors VK200
Contextual Info: MOTOROLA Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

TRANSISTOR Z4

Abstract: "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01
Contextual Info: Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

MRF5S21045N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

J350

Abstract: J449 ATC600F101JT250XT ATC600F0R5BT250XT SG732AT MD7IC AN1977 AN1987 ATC600F101 gsc3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

j687

Abstract: MRF323 VK200 case 244-04
Contextual Info: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

transistor marking PB C8

Abstract: NI-780S SMD transistor 2x sot 23
Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

J293

Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s