500 WATTS RF POWER AMPLIFIER Search Results

a061

Contextual Info: P/N 500-100-100-35-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 100 - 500 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 100 - 500 MHz

A057

Contextual Info: P/N 500-30-40-30-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 30 - 500 MHz 40 Watts Gain: 30 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 40 Watts cw minimum Frequency Range 30 - 500 MHz

push pull class AB RF linear

Abstract: 500-30-100-35-E3 class B push pull power amplifier
Contextual Info: Model A072 P/N 500-30-100-35-E3 RF POWER AMPLIFIER MODULE 30 - 500 MHz 100 Watts Small Size High Efficiency Low Even Order Harmonics Rugged Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS RF Output Power Frequency Range Gain Main DC Supply

Contextual Info: MPP5002K5200-2 DATA SHEET 2 Way High Power Broadband Combiner SMA Connectors From 500 MHz to 2.5 GHz Rated at 200 Watts MPP5002K5200-2 is a 2 way High Power Broadband RF Combiner with a max input power at 200 watts operating from 500 to 2500 MHz with, 50 ohm SMA

Contextual Info: MPP0801K0500-4 DATA SHEET 4 Way High Power Broadband Combiner N Connectors From 80 MHz to 1,000 MHz Rated at 500 Watts MPP0801K0500-4 is a 4 way High Power Broadband RF Combiner with a max input power at 500 watts operating from 80 to 1000 MHz with 50 ohm N connectors.

731 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts

Contextual Info: P/N 5 0 0 - 3 0 - 1 0 0 - 3 5 - E3 LCF RF POW ER AM PURER MODULE AMPLIFIERS Small Size High Efficiency Low Even Order Harmonics Rugged 30 - 500 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

11-PIN relay tube socket

Abstract: beam Tube circuit diagram of door interlock system erie ceramic TP-105 Erie 124311
Contextual Info: 8121 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic-Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 170 Watts PEP Output at 30 MHz 235 Watts CW Output at 470 MHz The BURLE 8121 is a small, forced-air-cooled beam power tube suitable for use as an RF power amplifier, distributed amplifier,

Contextual Info: 4 Way High Power Broadband Combiner From 80 MHz to 1,000 MHz Rated at 500 Watts, Type N TECHNICAL DATA SHEET PE20S0006 PE20S0006 is a passive 4 way High Power Broadband RF Combiner with 50 ohm N connectors operating from 80 to 1000 MHz, with a max input power at 500 watts. The PE20S0006 has greater than 12 dB typical isolation, less than 0.75 dB typical

Contextual Info: 2 Way High Power Broadband Combiner From 500 MHz to 2.5 GHz Rated at 200 Watts, SMA TECHNICAL DATA SHEET PE20S0007 PE20S0007 is a passive 2 way High Power Broadband RF Combiner with 50 ohm connectors operating from 500 to 2500 MHz, with a max input power at 200 watts. The PE20S0007 has greater than 13 dB typical isolation, less than 0.40 dB typical

VK-200-19

Abstract: VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

56-590-65

Abstract: MRF325 jmc 5201 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts

HW-02N

Abstract: BNC T connectors INSERTION LOSS Microlab/FXR HW-02N HW-15N QQ-S-365 HW-04N bnc T connector loss Microlab FXR
Contextual Info: MICROLAB/FXR Bias/Monitor Tees HU and HW series ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power, Low Loss 100 – 8,000 MHz 50 Watts Average Power Rating See HW series data for 500 Watts Minimal RF Insertion Loss High Reliability Powering of Antenna Amplifiers N, BNC, TNC, or SMA Standard

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

QM2D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

acrian RF POWER TRANSISTOR

Abstract: Acrian s 46120 BVces Scans-00115701
Contextual Info: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

2482 npn

Abstract: 2482 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed prim arily for w ideband large-signal output am plifier stages in the 100 to 500 MHz frequency range. • G uaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 M Hz Performance Output Power = 2.0 Watts

ferroxcube toroids

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

acrian RF POWER TRANSISTOR

Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
Contextual Info: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed