50 33G Search Results

Contextual Info: SIEM ENS 8M X 8-Bit Dynamic RAM 4k & 8k Refresh HYB 3164800J/T -50/-60 HYB 3165800J/T -50/-60 Preliminary Information • 8 388 608 words by 8-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: RF-LAMBDA RLNA16G32G The power beyond expectations Wide Band Low Noise Amplifier 16GHz~33GHz • • • • • • Gain: 33dB Typical Noise Figure: 2.5dB Typical P1dB Output Power: +23dBm Typical Supply Voltage: +12V @350mA 50 Ohm Matched Input / Output

Contextual Info: PRELIM INARY M O S E L V IT E L IC V53C816H 5 1 2 K X 16 FA ST PAG E M ODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, Irac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (^ aa) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tpC)

rf microwave amplifier with S Parameters

Abstract: 340 mmic mma-273336 "Microwave technology Inc" Amplifier 20dbm p1db
Contextual Info: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω

Rogers 4350B

Contextual Info: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet July, 2012 Features: •       32 Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω

mmic

Contextual Info: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet July, 2012 Features: •       32 Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω

1N4937G

Contextual Info: 1N4933G thru 1N4937G Glass Passivated Junction Fast Recovery Rectifier Reverse Voltage 50 to 600V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory * * * * * * * * Flammability Classification 94V-0 High temperature metallurgically bonded construction

HBM31GP

Abstract: HBM32GP HBM33GP HBM34GP HBM35GP HBM36GP HBM37GP HBM38GP
Contextual Info: HBM31GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes HBM38GP FEATURES * * * * * For surface mounted applications Low forward voltage, high current capability

HCM31GP

Abstract: HCM32GP HCM33GP HCM34GP HCM35GP HCM36GP HCM37GP HCM38GP
Contextual Info: HCM31GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes HCM38GP FEATURES * * * * * * For surface mounted applications Low profile package Built-in strain relief

FF015

Contextual Info: SIEMENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50/-60/-70 A d v a n c e d In fo rm a tio n • 1 04 8 57 6 w o rd s by 4-b it o rg a n iz a tio n Lo w p o w e r d is s ip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

Contextual Info: Low Noise, High Gain & IP3 Monolithic Amplifier 50Ω PMA4-33GLN+ 0.7 to 3.0 GHz The Big Deal • Low noise figure, 0.47 dB typ. @ 900 MHz • High gain, 39 dB typ. @900 MHz • High OIP3, +40 dBm typ. at 900 MHz 4mm x 4mm Product Overview Mini-Circuits PMA4-33GLN+ is an E-PHEMT based, low noise, dual chip, MMIC amplifier with a unique

Contextual Info: Low Noise, High Gain & IP3 Monolithic Amplifier PMA4-33GLN+ 50Ω 0.7 to 3.0 GHz The Big Deal • Low noise figure, 0.47 dB typ. @ 900 MHz • High gain, 39 dB typ. @900 MHz • High OIP3, +40 dBm typ. at 900 MHz 4mm x 4mm Product Overview Mini-Circuits PMA4-33GLN+ is an E-PHEMT based, low noise, dual chip, MMIC amplifier with a unique

Contextual Info: Low Noise, High Gain & IP3 Monolithic Amplifier 50Ω PMA4-33GLN+ 0.7 to 3.0 GHz The Big Deal • Low noise figure, 0.47 dB typ. @ 900 MHz • High gain, 39 dB typ. @900 MHz • High OIP3, +40 dBm typ. at 900 MHz 4mm x 4mm Product Overview Mini-Circuits PMA4-33GLN+ is an E-PHEMT based, low noise, dual chip, MMIC amplifier with a unique

MIL-C-17

Abstract: RG-211 MIL-W-85 M17/194-00001 M17 RG 180
Contextual Info: INTRODUCTION Times Microwave Systems designs and manufactures high performance coaxial cables, connectors and cable assemblies for a broad range of RF transmission applications. For more than 50 years, Times has been the leader in the development of new cable

IBM025161

Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

IBM025160

Abstract: IBM025160256 IBM025161 IBM025161256 IBM025170256 IBM025171256 IBM025171N
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

SF38G

Abstract: SF35G SF31G SF34G SF36G
Contextual Info: Compact Technology SF31G thru SF38G REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST RECTIFIERS DO-201AD FEATURES Glass Passivated Junction A Super fast switching for high efficiency A B Low reverse leakage current Low forward voltage drop

IBM025161LG5D60

Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

SF31G

Abstract: SF38G
Contextual Info: SF31G THRU SF38G 3.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 3.0 Amperes DO-201AD Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic

SF31G

Abstract: SF38G
Contextual Info: SF31G THRU SF38G 3.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 3.0 Amperes DO-201AD Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a

Contextual Info: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power

SF31G

Abstract: SF38G
Contextual Info: SF31G THRU SF38G 3.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 3.0 Amperes DO-201AD Features a a a a Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data a

siemens tle 4216

Abstract: TLE4216 siemens tle4216 siemens TLE4216 G TLE4216G 4216 d-1
Contextual Info: SIEMENS TLE 4216 Intelligent Sixfold Low-Side Switch Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown • Status monitoring • Shorted-load protection

SF38G

Abstract: SF31G
Contextual Info: SUPER FAST GLASS PASSIVATED RECTIFIER SF31G THRU SF38G VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere FEATURES • • • • • • DO-27 Super fast switching speed Glass passivated chip junction Low power loss, high efficiency Low leakage High Surge Capacity