50/TRANSISTOR 955 E Search Results

50/TRANSISTOR 955 E

Abstract: TCA955 TRANSISTOR 955 E
Contextual Info: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders

TRANSISTOR 955 E

Abstract: VPS05163 50/TRANSISTOR 955 E
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163

TRANSISTOR 955 E

Abstract: VPS05163
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration

lc 945 transistor

Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

TRANSISTOR 955 E

Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Contextual Info: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

transistor 9527

Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

mosfet st 9544

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

transistor 131-6

Abstract: 4139 temperature TRANSISTOR K 314 p945
Contextual Info: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH

TRANSISTOR BD 689

Abstract: TCA 160 transistor 955 TCA955 tca 955 Q67000-A983 DC MOTOR 100 R.P.M., 12v circuit diagram "tachometer generator"
Contextual Info: Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders Record players Movie Cameras Control system drivers Type Ordering Code

cgs resistor

Abstract: microstrip OZ 960 G200 20222
Contextual Info: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures

OZ 960 S

Abstract: G200 resistor 220 ohm 20222
Contextual Info: PTF 102027 GOLDMOS Field Effect Transistor 40 Watts, 925–960 MHz Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures

BDP955

Abstract: BDP951 BDP952 BDP953 BDP956 VPS05163
Contextual Info: BDP951 . BDP955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration

RF MOSFET MODULE

Abstract: MOSFET Amplifier Module H46S
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

BTP955L3

Contextual Info: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

Contextual Info: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and

BDP ST

Abstract: BDP951 BDP952 BDP953 BDP955 BDP956 VPS05163
Contextual Info: BDP951 . BDP955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP952 . BDP956 PNP 2 1 Type Marking Pin Configuration

transistor 4120

Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58DR1 AZ100LVEL58DR2 AZ100LVEL58T AZ100LVEL58TR1 AZ100LVEL58TR2 AZTLV58 MC100LVEL58
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer FEATURES • • • • • • PACKAGE AVAILABILITY 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors Q Output will Default LOW with Inputs Open or at VEE

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.

lc 945 transistor

Contextual Info: ERICSSON ^ PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP

transistor 4120

Abstract: AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

transistor BC 945

Abstract: RA20H8994M 1000v 200w Transistor RA20H8994M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

RA20H8994M

Abstract: d408 RF MOSFET MODULE RA20H8994M-01 RA20H8994M-E01 1000v 200w Transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz

microtek

Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors