5.1 AMPLIFIER CIRCUITS Search Results

RFS1003

Abstract: 5850MHZ
Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the

JESD 95-1, SPP-012

Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency

RFSP5031

Contextual Info: Advanced RFSP5031 5.1-5.9 GHz U-NII PA with Linearizer Product Description Applications The RFSP5031 power amplifier with linearizer is a high-performance GaAs HBT IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 26

HMC408LP3

Abstract: HMC408 HMC415 FDC6323L HMC314 HMC326MS8G HMC327MS8G HMC406MS8G HMC407MS8G HMC413QS16G
Contextual Info: v00.0103 HMC408LP3 PRODUCT NOTE A Simple CMOS Power Control Circuit for The HMC408LP3 Amplifier General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

HMC415

Abstract: microwave mosfet
Contextual Info: MICROWAVE CORPORATION v00.0103 A SIMPLE CMOS POWER CONTROL CIRCUIT FOR THE HMC408LP3 AMPLIFIER General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT Power Amplifier MMIC, which offers +30 dBm P1dB.

Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)

TC75S60F

Abstract: TC75S60FU
Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)

Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F, TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)

15W stereo amplifiers with tone controls circuits

Abstract: J600 J100 SN74LVC1G08 SN74LVC1G126 TAS5028A TAS5122 TAS5122DCA subwoofer 4Ohm 30W
Contextual Info: TAS5028-5122C6EVM User's Guide PurePath Digital 5.1 Channel Evaluation Module for the TAS5028A Digital Audio PWM processor and TAS5122DCA Digital Amplifier Power Output Stage in Both Bridge-Tied-Load and Single-Ended Configuration User's Guide January 2005

2.1 to 5.1 channel home theater kit

Abstract: home theater schematic 15W stereo amplifiers with tone controls circuits TAS5508 8ohm 15W speaker J100 J600 SN74LVC1G08 SN74LVC1G126 TAS5122
Contextual Info: TAS5508-5122C6EVM User's Guide PurePath Digital 5.1 Channel Evaluation Module for the TAS5508B Digital Audio PWM processor and TAS5122DCA Digital Amplifier Power Output Stage in Both Bridge-Tied-Load and Single-Ended Configuration User's Guide April 2006

27mhz rf amplifier NPN transistor to220

Abstract: 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110
Contextual Info: Ordering number:ENN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220

Contextual Info: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch

MMM6025

Abstract: MMM6025R2
Contextual Info: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch

Contextual Info: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)

Contextual Info: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)

pcb 200W audio amplifier

Abstract: power amplifier 200w PCB 200w audio power amplifier 4ohm STA 5150 STA575 POWER SUPPLY STABP01 bash sta575 power amplifier 200watts STA575
Contextual Info: AN1689 APPLICATION NOTE SAM351 : VERSION 2.1 HIGH POWER SOLUTION by Marco Motta In this document it is explained how to adapt the STA5150 Audio Amplifier to SAM351 module. The SAM 351 module is able to provide 6 x 100 W 5.1 solution with STM audio power device STA575. Its high

9744

Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
Contextual Info: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are

Contextual Info: Digital 2.5 W, 5.1 V, Boost Class-D Audio Amplifier with Output Sensing SSM4567 Data Sheet FEATURES Output noise: 21.7 V rms, A-weighted THD + N: 0.025% at 1 kHz, 500 mW output power PSSR: 90 dB at 217 Hz, with dither input 72 dB signal-to-noise ratio SNR on output current sensing

variable frequency drive circuit diagram

Abstract: Full-bridge LLC resonant converter variable frequency drive block diagram mc34066 using analog resonant controller MC34066 variable frequency circuit diagram T flip flop IC MC33066 LLC resonant converters LLC resonant converter application MC34066
Contextual Info: MC34066, MC33066 High Performance Resonant Mode Controllers The MC34066/MC33066 are high performance resonant mode controllers designed for off−line and dc−to−dc converter applications that utilize frequency modulated constant on−time or constant off−time control. These integrated circuits feature a variable

philips 3f3 4312 020 4124

Abstract: MC34067 application Philips 4322 021 ZERO VOLTAGE SWITCH mc34067p pin D1870 MC33067
Contextual Info: MC34067, MC33067 High Performance Resonant Mode Controllers The MC34067/MC33067 are high performance zero voltage switch resonant mode controllers designed for off−line and dc−to−dc converter applications that utilize frequency modulated constant off−time or constant deadtime control. These integrated circuits

ZX60-V62

Abstract: GC957
Contextual Info: Ultra Flat Gain Wideband Amplifier 50Ω ZX60-V62+ 0.05 to 6 GHz The Big Deal • Ultra Flat Gain • Broadband High Dynamic Range • Wideband, 0.05 to 6 GHz Case Style: GC957 Product Overview The ZX60-V62+ RoHS compliant uses Mini-Circuits' HBT technology to offer ultra flat gain over a broad frequency

MC1631

Contextual Info: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω PMA2-33LN+ 0.4 to 3.0 GHz The Big Deal • Ultra Low Noise Figure, 0.38 dB • High Gain, High IP3 • Small Size, 2 x 2 x 1mm 2mm x 2mm Product Overview Mini-Circuits PMA2-33LN+ is an E-PHEMT based, ultra-low noise MMIC amplifier with a unique combination of low noise and high IP3, making this amplifier ideal for sensitive, high-dynamic range receiver applications. This design operates on a single 3V supply, is well matched for 50Ω systems, and comes in a tiny,

MC33067

Abstract: MC33067P MC33067DW MC33067DWG MC33067DWR2 MC33067DWR2G MC34067 mc34067p
Contextual Info: MC34067, MC33067 High Performance Resonant Mode Controllers The MC34067/MC33067 are high performance zero voltage switch resonant mode controllers designed for off−line and dc−to−dc converter applications that utilize frequency modulated constant off−time or constant deadtime control. These integrated circuits

half bridge MC34067

Abstract: MC33067 MC34067 mc33067p MC33067DW MC33067DWG MC33067DWR2
Contextual Info: MC34067, MC33067 High Performance Resonant Mode Controllers The MC34067/MC33067 are high performance zero voltage switch resonant mode controllers designed for off- line and dc- to- dc converter applications that utilize frequency modulated constant off-time or constant deadtime control. These integrated circuits