5 PIN IC MARKING MS Search Results

Contextual Info: MICRON T E C H N O L O G Y INC • bi ll 5 ^ 0 0 0 5 1 5 1 SbT « M R N MT12D88C140 1 MEG x 40, 2 MEG x 20 IC DRAM CARD MICRON B S5E D ltCHNOl.OCiV INC IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) PIN« MARKING

Contextual Info: |V y |C R O I\l MT16D88C51232 5 1 2 K x 32, 1 M E G x 16 IC D R A M C A R D IC DRAM CARD 2 MEGABYTES 512K x 32, 1 MEG x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 GENERAL DESCRIPTION The M T16D88C51232 is a 2 m egabyte, IC DRAM card

Contextual Info: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFP540ESD BGA420
Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line

BFP540

Abstract: INFINEON ATS BGA420 Transistor BFP540
Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!

MOTOROLA DATE CODE transistor

Abstract: MSC2295–BT1
Contextual Info: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s

16f873

Abstract: MSM9520RS 3SK73 16f873 datasheet Diode 1S1588 FT-101Z 2SC1674L PB-2086A Clock control PIC PIC16F873 2sc1815 replacement
Contextual Info: FT-101Z/ FT-107/ FT-707/ FT-901,902 later version DISPLAY COUNTER UNIT (PB-2086A) Custom Integrated Circuit (MSM9520RS) Replacement Module Assembly and Installation Manual (v1.3e) MSM9520RS Replacement Module Manual v1.3e STEP-BY-STEP PROCEDURES This manual describes how to assemble, install and make adjustments of the MSM9520RS

hv9967

Abstract: HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910
Contextual Info: Supertex inc. HV9967 Integrated LED Driver with Average-Mode Current Control Features ► ► ► ► ► ► ► ► ► ► 3% accurate LED current Integrated 60V 0.8Ω MOSFET Small outline MSOP-8 package Low sensitivity to external component variation Cascode connection with a 500V depletion-mode

B78421P1482A005

Contextual Info: xDSL transformers ADSL interface Core EP 13, Analog Device AD20 MSP 910 Ordering code: B78421P1482A005 Date: July 2007 Data Sheet  EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: SIEGET
25 BFP 405ECSP NPN Silicon RF Transistor Preliminary data
For oscillators up to 12 GHz XY
For low current applications 4
Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1
Transition frequency f T = 25 GHz
Gold metallization for high reliability

marking L2 SOT23 6

Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
Contextual Info: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per

Transistor Equivalent list

Abstract: FMBT3904DW1 dual 1038 Transistor 1N916
Contextual Info: Formosa MS FMBT3904DW1 & FMBT3904DW2 Dual NPN Epitaxial Planar Transistor List List. 1 Package outline. 2

420ECSP

Abstract: BFP420ecsp marking BFP
Contextual Info: SIEGET
25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data
For oscillators up to 10 GHz XY
For high gain low noise amplifiers 4
Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1
Transition frequency f T = 25 GHz
Gold metallization for high reliability

FMBT2222A

Abstract: fmbt2222 125OC 1N914
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT2222 / FMBT2222A List List. 1 Package outline. 2

Siliconix mosfet guide

Abstract: SiP4280 SiP4280-1-T1-E3 SiP4280-3-T1-E3 DSA0038473 SIP4280D
Contextual Info: SiP4280 Vishay Siliconix Slew Rate Controlled Load Switch FEATURES • 1.8 V to 5.5 V Input Voltage range • Very Low RDS ON , typically 80 mΩ (5 V) • Slew rate limited turn-on time options - SiP4280-1: 1 ms - SiP4280-3: 100 µs • Fast shutdown load discharge option

125OC

Abstract: FMBT2222 FMBT2222A
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT2222AW List List. 1 Package outline. 2

SMS7630-079

Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Features ● Designed for high-volume commercial applications Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1) per JEDEC J-STD-020 ● Tight parameter distribution ● Available as singles, pairs and dual pairs

marking code 37u

Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2

FMBT4401

Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT4403 List List. 1 Package outline. 2

FMBT4401

Abstract: Transistor Equivalent list
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT4401 List List. 1 Package outline. 2

FMBT2907

Abstract: FMBT2907A FMBT2222 FMBT2222A
Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2

SMS7630-005LF

Abstract: SMS7621-079 equivalent SMS7621-005LF marking SH2 Microwave PIN diode spice SMS1546-005LF SMS1546-005 SMS7621-079 SMS7621-079LF SMS7630-011
Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Features ● Designed for high-volume commercial applications Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1) per JEDEC J-STD-020 ● Tight parameter distribution ● Available as singles, pairs and dual pairs

SMS1546-005

Abstract: SMS1546-005LF SMS7621-079 SMS7621-079LF SMS7630-011 SMS7630-079 SMS7630-079LF SMS7621-079 equivalent
Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Features ● Designed for high-volume commercial applications Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1) per JEDEC J-STD-020 ● Tight parameter distribution ● Available as singles, pairs and dual pairs

SMS7621-006LF

Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Features ● Designed for high-volume commercial applications Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1) per JEDEC J-STD-020 ● Tight parameter distribution ● Available as singles, pairs and dual pairs