5 GHZ TRANSISTOR Search Results

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain

BFR106

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

2SC5004

Abstract: NE58219 S21E on 5295 transistor 152.01 23E16
Contextual Info: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1

3525 "application note"

Contextual Info: 2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier ADL5321 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V

BA5 Amplifier

Abstract: BA512 SBA-5086 BA5 marking
Contextual Info: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Contextual Info: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold

bf 331

Abstract: bf331 NESG2021M05 NESG2021M05-T1-A S21E ic MAX 8997
Contextual Info: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

NESG2021M16

Abstract: NESG2021M16-T3-A S21E
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

NESG2101M16

Abstract: NESG2101M16-T3-A S21E
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

marking 269-3 sot23

Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz

Contextual Info: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to

88eb9

Abstract: 682e4 437-EB
Contextual Info: LMX2315 LMX2320 LMX2325 PLLatinum TM Frequency Synthesizer for RF Personal Communications LMX2325 2 5 GHz LMX2320 2 0 GHz LMX2315 1 2 GHz General Description Features The LMX2315 2320 2325’s are high performance frequency synthesizers with integrated prescalers designed for RF

Contextual Info: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz

ATR7040

Abstract: ATR7040-PVPG ATR7040-PVQG MO-220
Contextual Info: Features • • • • • • • Frequency Range 5 GHz to 6 GHz Pout 25 dBm at 5.8 GHz Gain Typically 30 dB Pin Typically 0 dBm VCC 2.7V to 3.8V Power Consumption in Power-down Mode Typically < 1 µA Package: QFN16 3 mm x 3 mm 5.8 GHz WDCT Power Amplifier

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Contextual Info: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )

Transistor TT 2246

Contextual Info: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz

Contextual Info: PTF 10123* PRELIMINARY GOLDMOS Field Effect Transistor 5 Watts, 2.1–2.2 GHz Description The 10123 is a GOLDMOS FET intended for large signal applications from 2.1 to 2.2 GHz. It operates with 47% efficiency and 11 db minimum gain. Nitride surface passivation and gold metallization ensure

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

mmic A

Abstract: 50 ohm resistor dc supply transistor s parameters noise
Contextual Info: SLN-186 DC-5.OGHz Low Noise Amplifier Preliminary Data April, 1996 Fea tu re s - Patented GaAs HBT Technology - Low Noise Figure: 1,5dB Nfopt at 1.5 GHz - High Associated Gain: 27dB Typical at 2 GHz - Cascadable 50 Ohm -1 .5:1 VSWR Typ - Low Current Draw - Less than 12mA

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers