5 GHZ TRANSISTOR Search Results

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN  Low noise figure DESCRIPTION

data sheet 702 TRANSISTOR npn

Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain

transistor zo 607

Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

BJT 5240

Abstract: 13170
Contextual Info: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW

BFR106

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

2608 surface mount transistor

Abstract: A 3760 0549
Contextual Info: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW

130-082

Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
Contextual Info: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain

TC2896

Abstract: gm 8562 TC289 TC1806
Contextual Info: TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz

BFR93 application note

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

1496d

Abstract: SOT c5 87 7686 AN-772 0603CS ADL5320 ADL5321 ADL5321ARKZ-R7 ADL5321-EVALZ ADL5373
Contextual Info: 2.3 GHz to 4.0 GHz RF Driver Amplifier ADL5321 Operation: 2.3 GHz to 4.0 GHz Gain of 14 dB at 2.6 GHz OIP3 of 41 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply: 5 V Power supply current: 90 mA typical Internal active biasing

SOT23 W1P NXP

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

3525 "application note"

Contextual Info: 2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier ADL5321 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V

a2631

Abstract: a 2631
Contextual Info: 2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier ADL5321 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V

3ghz npn transistor 1w

Abstract: rca 3001 transistor RCA3001 RCA3003 HF-46 XI 3003 RCA3005 telemetry 406 1651 ghz
Contextual Info: File No. 6 5 7 . RF Power Tran sisto rs Solid State Division RCA3001 R C A3003 RCA3005 1-W, 2.5-W , and 4.5-W 3-GHz Emitter-Ballasted N-P-N Transistors Features: • 1-W output with 7-dB gain min. at 3 GHz (RCA3001) ■ 2.5-W output with 5-dB gain (min.) at 3 GHz (RCA3003)

093.266

Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Contextual Info: SIEGET
25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET
25 GHz fT - Line

N4 MMIC

Abstract: marking n4 mmic
Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

TRANSISTOR BI 187

Contextual Info: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA5 Amplifier

Abstract: BA512 SBA-5086 BA5 marking
Contextual Info: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

sba-4086

Contextual Info: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Contextual Info: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with