4X12 Search Results

Contextual Info: Stranded Loose Tube MPC Cable, Corrugated Steel Armouring, A-DQ ZN (SR)H 4x12 G62.5/125 (OM1) 219.9868 Corning Cable Systems MPC (Multi Purpose Cable) Stranded Loose Tube Cables are flame retardant, indoor/ outdoor and designed for interbuilding / intrabuilding

Contextual Info: Ruggedized Zone Enclosure, Preterminated, ALTOS Cable 48 F, 4x12 OptiTip Adapters, Pulling Grip, MM OM3 , 500 ft 223.0125 Corning Cable Systems AnyLAN Ruggedized Zone Enclosure combines the AnyLAN OptiTip™ adapter with a sealed closure for quick and easy deployment, eliminating the need for field-terminated fiber optic cables. The

Contextual Info: Stranded Loose Tube MPC Cable, GlassYarn Armouring, A-DQ BN H A-DQ(BN)H 4x12 E9 OS2/125 LT 219.9868 Corning Cable Systems MPC (Multi Purpose Cable) Stranded Loose Tube Cables are flame­-retardant, indoor/ outdoor cables designed for interbuilding and intrabuilding backbones in duct and riser applications.

Contextual Info: Stranded Loose Tube MPC Cable, GlassYarn Armouring, A-DQ BN H A-DQ(BN)H 4x12 G50CC OM2/125 LT 219.9868 Corning Cable Systems MPC (Multi Purpose Cable) Stranded Loose Tube Cables are flame­-retardant, indoor/ outdoor cables designed for interbuilding and intrabuilding backbones in duct and riser applications.

gw 360

Contextual Info: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,

128*64

Abstract: transistor GW 93 H GW 94 H
Contextual Info: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address

Contextual Info: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High

Contextual Info: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,

EDI2CG472128V

Contextual Info: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)

Contextual Info: ^EDI EDI2KG432128V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128K x32 Synchronous The EDI2KG 432128VxxD is a S ynchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­

GW 94 H

Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
Contextual Info: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module

GW 94 H

Abstract: A015 EDI2GG464128V ICC3-400
Contextual Info: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight

14566

Abstract: EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
Contextual Info: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION • 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. • Random Access Memory

vinavil 59

Abstract: TME 57
Contextual Info: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs

Contextual Info: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module

Contextual Info: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga­

EDI9F416128C100BNC

Abstract: EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
Contextual Info: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION n 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. n Random Access Memory

Contextual Info: HIGH PERFORMANCE, 3 PH ASE C H A SSIS MOUNTED FILTER R ated Le a k a g e C urrent In d uctance C urrent A @ 2 5 0 V 50H z mH S F 4 3 0 0 -1 0 /0 1 10 0.45m A 4x200 6 .3 x 0 .8 Faston S F 4 3 0 0 -2 0 /0 4 20 1.8mA 4x120 M4 Stud S F 4 3 0 0 -2 5 /0 6 25 2.85m A

C124-NLED

Abstract: 4X12 lcd
Contextual Info: EA C124-NLED 1.99 DOTMATRIX 4x12 6,75mm ZH, LED-BELEUCHTET reit b mm held 2 , 3 d 6 nur für Han l idea Abmessungen 63,2x55x12,5mm TECHNISCHE DATEN * * * * * * * * * LCD SUPERTWIST FÜR BESTEN KONTRAST KONTROLLER IN COB TECHNOLOGIE, HD 44780-KOMPATIBEL 4- ODER 8- BIT DATENBUS + STEUERLEITUNGEN E, RS, R/W

file for WATER LEVEL CONTROLLER

Abstract: pdf file download for WATER LEVEL CONTROLLER UC1701
Contextual Info: DOGS GRAPHIC DISPLAY 12.2013 102x64 DOTS EA DOGS102W+W 39x41mm TECHNICAL DATA * * * * * * * * * HIGH-CONTRAST LCD SUPERTWIST DISPLAY FSTN WITH 10µm DOT GAP OPTIONAL LED BACKLIGHTS IN WHITE COLOR 102x64 PIXELS (CORRESPONDS TO 8x17 CHARACTERS OR 4x12 LARGE CHARACTERS)

Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com MAXPak Series MAX-50M 4x12.5V HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR

00z1

Contextual Info: ^EDI EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM •ELECTRONIC DESISM5, INC 4x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchro­ Flow-Through Architecture

Contextual Info: MEk EDI9F416128C ELECTRONIC DESIGNS, NC.I 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs