4SSS452 Search Results

IRGBC46

Abstract: VQE 22 vqe 22 d RGBC4
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4SSS452 OOlQblS b ■ Data Sheet No. PD-9.667 T-3^-03 In f e m a t ip n a l INSULATED GATE BIPOLAR TRANSISTOR IRGBC46 60QV, 60A / 0 V\ lIO R lR e c t i f i e r Ü ■ V 600V, 60A, TO-220AB IGBT FEATURES International Rectifier's IRG series of Insulated Gate

Contextual Info: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary

Contextual Info: International B Rectifier HEXFRED Provisional Data Sheet PD-2.361 HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M ajor Ratings and Characteristics per Leg Characteristics Units Vr 1200 V 8 .0 A V rrm I f AV) trr (typ) 28 ns Q rr (typ) 140 nC I rrm (typ)

Contextual Info: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve

Contextual Info: International S I Rectifier Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

diode c552

Abstract: G0551 IRGDDN200M12 IGBT 200A 1200V G-549
Contextual Info: Ife g g jig g i^ B jK e c n n e r IR G D D N 2 0 0 M Î2 iR O R P N g n n M ig "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 1200V *c = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

Contextual Info: 4855452 International !“R R ectifier OCH H I N R PD-9.642A IRFI840G HEXFET Pow er M O S F E T • • • • • 00J517A INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

N mosfet 100v 200A

Contextual Info: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz