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    4PIN TRANSISTOR Search Results

    4PIN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP187
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (photodarlington transistor output), DC input, 3750 Vrms, 4pin SO6 Datasheet
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy

    4PIN TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TLP621F

    Abstract: TLP521 4pin ic TLP521 MOSFET DRIVER TLP151 tlp762 TLP250 MOSFET DRIVER application note 4N26 Photodiode TLP521 SOP-4 TLP3507 TLP250 igbt driver applications
    Contextual Info: 2. Selection Guide 6 5 4 2 1 3 4N38 SHORT 4N38A(SHORT) 6 MFSOP6 (4pin) (Mini Flat) AC input 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Standard TLP121 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Low input current TLP124 1 3 6 4 MFSOP6 (4pin) (Mini Flat) AC input Low input current


    Original     		4n38atlp121tlp124tlp597g+15tlp599atlp598gtlp598atlp598b54sop6tlp621ftlp521 4pin ictlp521 mosfet drivertlp151tlp762tlp250 mosfet driver application note4n26 photodiodetlp521 sop-4tlp3507tlp250 igbt driver applications PDF

    Contextual Info: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		mgf3021am PDF

    Contextual Info: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		mgf3022am32dbm PDF

    Contextual Info: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		mgf3021am PDF

    Contextual Info: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.


    Original     		mgf3022am32dbm PDF

    mgf4935am

    Contextual Info: < Low Noise GaAs HEMT > MGF4935AM 4pin flat lead package DESCRIPTION The MGF4935AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4935am12ghz15000pcs/reel PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4921am PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4936am12ghzmgf4936am-7515000pcs/reel PDF

    MGF4934

    Abstract: mgf4934cm MGF4934CM-75 130/KU 601
    Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934cm12ghzmgf4934cm-7515000pcs/reel+2mgf4934130/ku 601 PDF

    MGF4931AM

    Abstract: MGF4931 77153
    Contextual Info: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4931am12ghz15000pcs/reelmgf4931+177153 PDF

    MGF4921AM

    Abstract: 5442
    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4921am15ric5442 PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4965bm20ghz15000pcs/reel PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4965bm20ghz15000pcs/reel PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4936am12ghzmgf4936am-7515000pcs/reel PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934bm12ghzmgf4934bm-7515000pcs/reel PDF

    MGF4921AM

    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4921am PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934cm12ghzmgf4934cm-7515000pcs/reel PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934bm12ghzmgf4934bm-7515000pcs/reel PDF

    Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934am12ghz3000pcs/reel PDF

    InGaAs HEMT mitsubishi

    Abstract: 4pin transistor top 205 MGF4934AM GD-30
    Contextual Info: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934am12ghzingaas hemt mitsubishi4pin transistor+2top 205gd-30 PDF

    mitsubishi 7805

    Abstract: MGF4934AM
    Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		may/2007mgf4934am12ghz3000pcs/reel+1mitsubishi 7805 PDF

    GD-30

    Abstract: MGF4931AM 77153
    Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		may/2007mgf4931am12ghzgd-30+177153 PDF

    GD-30

    Contextual Info: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		mgf4934cm12ghzgd-30 PDF

    GD-30

    Abstract: MGF4934AM
    Contextual Info: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		july/2007mgf4934am12ghzgd-30 PDF