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    MGF4921AM Search Results

    MGF4921AM Datasheets Context Search

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    MGF4921AM

    Abstract: 5442
    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original
    mgf4921am15ric5442 PDF

    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original
    mgf4921am PDF

    MGF4921AM

    Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original
    mgf4921am PDF

    MGF4921AM

    Abstract: transistor GaAs FET low noise 4Ghz
    Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Mar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.


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    mgf4921amtransistor gaas fet low noise 4ghz PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    h-cx587-rki-1311mgf4937mgfg5h1503+8mgf4937amgd-32mgfg5h1502mgf0904mgfc39v5964mgf2430mgf0909aba012j1 PDF

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original
    ql-1104e-ajuly/2008gd-26mgf4951a/52a+16mgf4953a/54amgf1951amgf1952amgf1953amgf1954amgf4851agaas fet marking bgaas fet micro-x package markinggaas fet marking amarking k gaas fetmgf1961agaas fet micro-x packagegaas fet marking jmgf1964amgf1963amicro-x marking "k PDF