4MX8 DRAM SIMM Search Results

4Mx8 dram simm

Abstract: 30-pin simm memory dynamic
Contextual Info: j DRAM MODULE 4 Mega Byte KMM584100AN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM584100AN is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584100AN consists of two CMOS

4Mx8 dram simm

Abstract: KMM5841OOAKN
Contextual Info: DRAM MODULE 4 Mega Byte KMM584100AKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package Preliminary GENERAL DESCRIPTION FEATURES The Sam sung KM M 584100AKN is a 4M bit x 8 • Performance Range. D ynam ic RAM high density m em ory module. The

4Mx8 dram simm

Contextual Info: DRAM MODULE 4 Mega Byte KMM5841OOAKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh ,5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5841 OOAKN is a 4M bit x 8 I P r e lim in â r y FEATURES • Performance Range: Dynam ic RAM high density m em ory module. The

4Mx8 dram simm

Abstract: KM41C4000CJ
Contextual Info: DRAM MODULE 4 Mega Byte KMM584000C1 Fast Page Mode 4Mx8 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM584000C1 is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584000C1 consists of eight CMOS 4Mx1bit DRAMs in 20-pin SOJ packages mounted on

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

m7401

Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

AS1003

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM84000 MCM8L4000 4Mx8 Bit Dynamic Random Access Memory Module The MCM84000S is a 32M, dynamic random access memory DRAM module organized as 4,194,304 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of eight MCM54100A DRAMs housed in 20/26 J-lead

MCM84000AS60

Contextual Info: MOTOROLA SC M E H O R Y / A S I C M OTOROLA h S 1E ]> b3b7251 0003571 175 SEM ICO ND U C TO R • ■ TECHNICAL DATA MCM84000A MCM8L4000A Advance Information 4Mx8 Bit Dynamic Random A ccess Memory Module The M C M 8 4 0 0 0 A S is a 32M, dynam ic random a cc e ss memory (DRAM )

Contextual Info: SMART SM5360840UUQUUU Modular Technologies May 12, 1998 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Part Numbers Features • • • • • • • • • • • • SM53608400UQUUU : FPM, 5.0V Standard : JEDEC SM53608408UQUUU : EDO, 5.0V

SM53208400

Contextual Info: SMART SM5320840UUXUUU Modular Technologies March 12, 1997 32MByte 8M x 32 DRAM Module - 4Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM53208400UXUUU SM53208401UXUUU SM53208408UXUUU SM53208409UXUUU Standard :

4Mx8 dram simm

Contextual Info: SM57208407UB6AU Preliminary B Revision History • October 2, 1997 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191

Contextual Info: SM5360440UUQAUU SM5360440UUQLUU SMART Modular Technologies September 23, 1997 16MByte 4M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM53604400UQAUU SM53604408UQAUU SM53604400UQLUU SM53604408UQLUU

SM532084082X3S6

Contextual Info: SM5320840UUXUUU January 12, 2001 Revision History • January 12, 2001 Updated ordering information on page 24. • March 11, 1997 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

Contextual Info: SMART SM5320440943UUU Modular Technologies October 28, 1997 16MByte 4M x 32 DRAM Module - 4Mx4 based 100-pin DIMM, Non-buffered Features • • • • • • • • • • • Standard : JEDEC Configuration : Non-ECC Access Time : 60/70/80ns Operation Mode

256KX8 SIMM

Abstract: 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8
Contextual Info: TABLE OF CONTENTS GENERAL PRODUCT INFORMATION Reference by S iz e . 4 Dense-Pac Microsystems Modules and M onolithics. 5

Contextual Info: SM57204407UB6AU Preliminary A Revision History • October 2, 1997 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191

Contextual Info: SM53204407UF6UU March 30, 2000 Revision History • March 30, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • August 5, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

Contextual Info: SMART SM5640440UUXUGU Modular Technologies March 21, 1997 32MByte 4M x 64 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56404400UXUGU SM56404401UXUGU SM56404408UXUGU SM56404409UXUGU

Contextual Info: SMART SM5360440UUQUUU Modular Technologies December 29, 1998 Revision History • May 12, 1998 Datasheet released. • December 29, 1998 Modified pin name on page 2. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SMART SM5640440UUNWGU Modular Technologies December 22, 1998 Revision History • December 22, 1998 Corrected physical dimension for 5V module page 12 Changed physical dimensions from inches to mm (pages 12 & 13). • September 3, 1997 Datasheet released.