4M DRAM EDO Search Results

A43L4616

Abstract: RA12
Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM

Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM

HYM5V64414

Abstract: HV51V17404A HYM5V64414AC
Contextual Info: -HYUNDAI HYM5V64414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE -with EXTENDED DATA OUT DESCRIPTION TheHYM5V64414A is a 4M x 64-bit EDO m ode CMOS DRAM mod ule consisting of sixteen HY51V17404A in 24/26

j13000

Abstract: dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF
Contextual Info: H igh P erform an ce 4M x4 CMOS DRAM « II Features • Organization: 4,194,304 words x 4 bits • High speed A S4C 4M 4E0 A S4LC4M 4E0 4M X 4 CMOS EDO DRAM Advance information JEDEC standard package - 400 mil, 24/26-pin SOJ 5V power supply 4C4M4E0 3V power supply (4LC4M4E0)

Contextual Info: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F40 1 0B is a 4M x72bits Dynamic • Part Identification

44C4104

Contextual Info: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM53240 1 04CK is a 4M x32bits RAM high density memory

Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72V4005GU-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

Contextual Info: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS, INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic

44C4104

Contextual Info: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KM M 53240 1 04CK is a 4M x32bits RAM high density memory

UG44W6446HSG

Contextual Info: UG44W644 8 6HSG Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 4 pcs 4M x 16 DRAM with LVTTL, 4K & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

DQ60-DQ63

Abstract: gu50
Contextual Info: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte

EDI4164MEV50SM

Abstract: ed09 EDI4164MEV-RP Edd 44 EDI4164MEV60SM EDI4164MEV60SI EDI4164MEV
Contextual Info: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS. INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic

Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11217-1E MEMORY CMOS 4M x 64 FAST PAGE MODE DRAM MODULE MB8504D064AA-60/-70 CMOS 4M × 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

chip18

Abstract: MB85317A
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11204-1E MEMORY CMOS 4M x 72 Bit FAST PAGE MODE DRAM MODULE MB85317A-60/-70 CMOS 4M × 72 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting

Contextual Info: DRAM MODULE KMM466F404AS1 -L KMM466F404AS1-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Sam sung KM M 466F404AS1-L is a 4M x64bits Dynamic RAM high density KM M 466F404A S1-L m em ory

SL32

Abstract: SL32S6C4M4E-A60C edo dram 60ns 72-pin simm
Contextual Info: SL32 S/T 6C4M4E-A60C 4M X 32 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL32(S/T)6C4M4E-A60C is a 4M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

SO-DIMM

Abstract: SL32D6C4M4E-A60V 72-Pin SO-DIMM SL32D6C4M4E-A50V
Contextual Info: SL32D6C4M4E-AxxV 4M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D6C4M4E-AxxV is a 4Mx 32 bits Dynamic RAM (DRAM) Small Outline-Dual Inline Memory Module (SODIMM). This module consists of two CMOS 4M x 16 bits DRAMs

Contextual Info: 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

HYM64V4045GU50

Abstract: GU50
Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: UG54E6424GJ T G-6XC Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode buffered DIMM based on 16 pcs 4M x 4 DRAM & 2 pcs buffers with LVTTL, 2K Refresh PIN ASSIGNMENT (Front View) 168-Pin DIMM FEATURES Pr

72-Pin SO-DIMM

Abstract: edge connector 22 pin DQ26
Contextual Info: SL32D4B4M2E-A60V 4M X 32 Bits DRAM 72-Pin SO-DIMM EDO Memory Module FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL32D4B4M2E-A60V is a 4M x 32 bits Dynamic RAM DRAM Small Outline Dual Inline Memory Module (SODIMM) . This module consists of eight CMOS 4M x 4 bits DRAMs

72-Pin SO-DIMM

Abstract: edge connector 22 pin SO-DIMM
Contextual Info: SL32D4B4M2E-A60 4M X 32 Bits DRAM 72-Pin SO-DIMM EDO Memory Module FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL32D4B4M2E-A60 is a 4M x 32 bits Dynamic RAM DRAM Small Outline Dual Inline Memory Module (SODIMM) . This module consists of eight CMOS 4M x 4 bits DRAMs

M404A

Contextual Info: V7SH VM43217400D.VM83217400D 4M,8Mx32-Bit Dynamic RAM Module Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM